MTP6P20E

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The MTP6P20E is a high-performing, N-channel enhancement-mode field-effect transistor (FET) designed for modern power conversion systems, combining drain-source breakdown voltage up to 200 V and high operating transconductance. Part of the MTZ and MTP series, the MTP6P20E is specifically designed to have superb dyna-mic and static performances, a wide range of operating voltage, fast switching capability and a low on- )state resistance.Due to its wide array of features, the MTP6P20E is suitable for various kinds of applications like power management, HVAC and PLC systems, computational displays and high-end frequency conversion equipment.

The MTP6P20E works according to the field-effect principle. The device consists of a source, drain, gate, body and an insulator, which serves as a gate dielectric. When a voltage is applied to the gate, it controls the current flow from source to drain. The FET terminal body is usually connected to the source, which means the gate-source junction is closed when the device is off and unable to conduct current in either direction. This is known as enhancement mode since the gate voltage must exceed a threshold voltage, known as the pinch-off voltage, in order to turn the FET on and allow current flow. With the source terminal being held at a constant potential, the drain current increases as the gate voltage is increased. The gate voltage is also set to be independent of the drain current.

The MTP6P20E is a drain-source voltage enhancement-mode field-effect transistor with a drain-source breakdown voltage of up to 200 V. It has a good channel conductance, low on-state resistance and a high breakdown voltage capability. To illustrate this, the drain-source current is given by the following equation:

Id = μ * (Vgs - Vt) * (W/L) * 08 * Vds

Where μ and Vt are the transistor’s mobility and threshold voltage, respectively, W/L is the width-length ratio of the active region and Vds is the drain-source voltage. This allows the device to be used in a wide range of operating voltages.

The MTP6P20E offers fast switching ability, allowing it to be used in high-speed switching applications. The high-speed switching is enabled by the device’s fast response to turning on and off. Moreover, the device’s high transconductance allows it to control the drain current with a low gate drive voltage, which facilitates its use in high-side drivers or motor control circuits. The MTZ and MTP series are designed to use an operating temperature range from -40 to 100 °C and a maximum junction temperature of 175 °C.

In sum, the MTP6P20E is an high-performing field-effect transistor (FET) designed for modern power conversion systems. It has a drain-source breakdown voltage of up to 200 V and an operating transconductance, which enables it to control the drain current with a low gate drive voltage. It is suitable for applications like power management, HVAC and PLC systems, computational displays and high-end frequency conversion equipment due to its wide array of features such as low on-state resistance, fast switching capability and its ability to maintain a low temperature across a wide range of operating voltages.

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