MTZJ4V7SB R0G Allicdata Electronics
Allicdata Part #:

MTZJ4V7SBR0G-ND

Manufacturer Part#:

MTZJ4V7SB R0G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 4.68V 500MW DO34
More Detail: Zener Diode 4.68V 500mW ±2% Through Hole DO-34
DataSheet: MTZJ4V7SB R0G datasheetMTZJ4V7SB R0G Datasheet/PDF
Quantity: 1000
20000 +: $ 0.01720
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.68V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Description

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Introduction

The MTZJ4V7SB R0G is a Zener diode designed for single applications and is typically used to protect components from transient spikes in low-voltage circuits. This type of diode has the ability to regulate a voltage to a predetermined level and break the circuit should that voltage become too high. Depending on the application, this diode can also be used to reverse the current flow and to protect circuits from any type of fault current.

Working Principle

The working principle of MTZJ4V7SB R0G is based on breakdown voltage in Zener diodes. This type of diode utilizes a semiconductor p-n junction. The traditional semiconductor p-n junction is known to be affected by applied voltage. The voltage drop across it transcends the barrier height, allowing the two semi-conductors to be in contact and generate current flow.

In the MTZJ4V7SB R0G, the applied external voltage is higher than the breakdown voltage, which results in an increase in the electric intensity of the junction. This causes Zener breakdown, which activates an avalanche effect that further enhances the current flow in the system. As the current increases, the applied voltage increases as well and the impedances across the diode drop to zero, allowing for a continuous current flow.

Typical Characteristics

The MTZJ4V7SB R0G has a breakdown voltage of 6.2V - 7.2V and a maximum zener impedance of 5.0 ohms. The diode also has a typical thermal resistance of 20oC/W. The typical forward current of the diode is 2.0A. In terms of power dissipation, the diode can handle up to 500mW.

Application Fields

The MTZJ4V7SB R0G is a versatile device that can be used in a variety of low-voltage circuits. It can be used to protect against transient spikes in systems such as electrical motor controllers, as well as for reverse current and insulation/protection circuits. In addition, the diode can be used in ripple control, optical equipment, isothermal control, and audio/video equipment.

Conclusion

In summary, the MTZJ4V7SB R0G is a diode designed for single applications and is typically used to protect components from transient spikes in low-voltage circuits. The diode works by utilizing breakdown voltage in Zener diodes with a breakdown voltage of 6.2V - 7.2V and maximum zener impedance of 5.0 ohms. This type of diode can be used in a variety of applications, such as electrical motor controllers, ripple control, optical equipment, isothermal control, and audio/video equipment.

The specific data is subject to PDF, and the above content is for reference

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