MTZJT-772.0B Allicdata Electronics
Allicdata Part #:

MTZJT-772.0B-ND

Manufacturer Part#:

MTZJT-772.0B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 2V 500MW DO34
More Detail: Zener Diode 2V 500mW ±3% Through Hole MSD
DataSheet: MTZJT-772.0B datasheetMTZJT-772.0B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 2V
Tolerance: ±3%
Power - Max: 500mW
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MTZJT-772.0B is a single zener diode with a wide range of applications. It is a low-power, voltage regulated diode specially designed for low-voltage, high-power and low-temperature applications. The MTZJT-772.0B offers an ultra-dynamic dynamic range with an ultra-fast transient response time and excellent linearity. Its maximum current rating is 2.0A, with a maximum power dissipation of 20W. Its maximum voltage rating is 72V, with a maximum zener voltage of 76V.

The MTZJT-772.0B has a wide range of application fields, such as power rectification and control, EMI suppression, radio frequency, sensing, and communication systems. It is ideal for voltage regulators, as it provides a very high degree of accuracy and stability. It can also be used as a voltage clamps, providing a low dynamic impedance at the zener temperature. Finally, it is commonly used for power supply design, providing a wide range of voltage regulation options due to its low impedance at high current densities.

The basic principle behind the operation of the MTZJT-772.0B is simple. When voltage is applied to the anode, it causes a current to flow through the diode. This current passes through the metal-oxide layer, which acts as a resistive element, limiting the amount of current. The metal-oxide layer also creates a potential barrier at the junction of the anode and cathode. Due to the potential barrier, the current passing through the device is limited to a predetermined value. This predetermined value is called the zener voltage and is determined by the characteristics of the metal-oxide layer.

The MTZJT-772.0B has a number of advantages over other zener diodes. It has a relatively low forward voltage drop, which makes it ideal for applications that require a low-voltage, high-power circuit. It also has a wide dynamic range, with an ultra-fast transient response time and excellent linearity. Finally, its low impedance at high current densities makes it an ideal choice for power supplies.

In summary, the MTZJT-772.0B is a single zener diode with a wide range of applications. Its wide range of application fields and excellent performance make it an ideal choice for low-voltage, high-power and low-temperature applications. It has a low-voltage drop and a wide dynamic range, along with an ultra-fast response time and excellent linearity. Finally, its low impedance at high current densities make it an ideal choice for power supply design.

The specific data is subject to PDF, and the above content is for reference

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