
Allicdata Part #: | MTZJT-7739B-ND |
Manufacturer Part#: |
MTZJT-7739B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 39V 500MW MSD |
More Detail: | Zener Diode 39V 500mW ±3% Through Hole MSD |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 39V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 85 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 30V |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AG, DO-34, Axial |
Supplier Device Package: | MSD |
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The MTZJT-7739B is a type of diode, specifically a Zener diode, meaning it is a single diode fabricated to allow either unidirectional current-flow or low-voltage reverse current-flow when the prevailing voltage exceeds its breakdown voltage. It is a general-purpose Zener diode manufactured using epitaxial technology, packaged in the miniMELF (DO-213AA) surface mount package, with a lead-free meet-profile of 260°C reflow profile.
The main application field of the MTZJT-7739B is protection against overvoltage commonly seen in power supply, surge protection and short circuit protection circuits. A Zener diode such as the MTZJT-7739B works by allowing current to freely flow in the forward direction below its breakdown voltage, or the region of normal operation. The voltage in this region is called the knee voltage, is less than the breakdown voltage, and is relatively constant over a wide range of current values. Above a critical voltage, known as the Zener breakdown voltage, the current is reversed and the diode acts as a switch, which is what makes it well suited for protection against overvoltage given that the breakdown voltage value can be tailored to suit the application’s specific needs.
The MTZJT-7739B has a maximum reverse voltage of 7.4V and a nominal breakdown voltage of 6.4V. Its maximum thermal resistance is 150°C/W and its maximum power dissipation is 200 mW, with a temperature coefficient at nominal Zener voltage of -0.15%/K. It has a maximum reverse current of 0.1mA and a leakage current of 1.0µA. It also has a really low clamping voltage of less than 7.3V.
In operation, the MTZJT-7739B functions as a reverse biased element, meaning current will flow through it only if the reverse voltage applied is higher than its breakdown voltage value. It is the reverse force that holds off the flow of the electron through a diode material until the Zener voltage is reached, creating a junction barrier, which is one of its strongest features. As the Zener voltage is reached, the diode junction is run over and turns into a low resistance path, allowing the current to flow through the device.
In summary, the MTZJT-7739B is a single Zener diode specifically designed to serve as an overvoltage protection device, packaged into a miniMELF (DO-213AA) surface mount package. Its applications include power supply, surge protection and short circuit protection circuits. With a maximum reverse voltage of 7.4V and a nominal breakdown voltage of 6.4V, it has a maximum thermal resistance of 150°C/W and a maximum power dissipation of 200mW. It also has a really low clamping voltage of less than 7.3V, while its leakage current is 1µA. In operation, it functions as a reverse biased element, creating a junction barrier and allowing current to flow only if the reverse voltage applied is higher than its Zener breakdown voltage value.
The specific data is subject to PDF, and the above content is for reference
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