Allicdata Part #: | MUR190AHR1G-ND |
Manufacturer Part#: |
MUR190AHR1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 900V 1A DO204AL |
More Detail: | Diode Standard 900V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | MUR190AHR1G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.06983 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 900V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 900V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The MUR190AHR1G is a single rectifier diode that is often used in power supplies and motor control circuits. It is a high-efficiency, fast-switching unit that can provide up to 25A of current with a maximum reverse voltage rating of 200 volts. The MUR190AHR1G is particularly suitable for applications where a high efficiency and fast switching speed is desired and where very low forward voltage drop and low dissipation is required.
The main purpose of a rectifier diode is to convert AC power to DC power by allowing electricity to flow in only one direction. This unit features a low forward voltage drop of 1.2 volts and a maximum reverse recovery time of 20ns. It is fabricated using high-temperature-resistant (HTR) epitaxial silicon technology, which increases its capability to withstand high temperatures generated by rapid switching. The MUR190AHR1G also provides excellent surge current and peak forward power capabilities.
In addition to its fast switching speed, the MUR190AHR1G provides a diode capacitance of 12pF, making it suitable for snubber networks. The device also features a high junction temperature rating of up to 175°C, allowing it to be used in high temperature environments.
The working principle of the MUR190AHR1G is based on the PN junction diode. This diode is composed of two different semiconductor materials, n-type and p-type, which are separated by a thin layer of insulation. When an electrical voltage is applied to the positive and negative terminals of the diode, it allows current to flow in one direction only before the applied voltage has reached the diode’s breakdown voltage. This allows the diode to act as a rectifier, allowing current to flow in only one direction.
The MUR190AHR1G is ideal for applications where a high efficiency and fast switching speed are needed. It is suitable for use in DC power supplies, motor control circuits, and snubber networks. The device has a maximum reverse voltage rating of 200 volts and a low forward voltage drop of 1.2 volts. Moreover, the device features excellent surge current and peak forward power capabilities.
The specific data is subject to PDF, and the above content is for reference
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