MVGSF1N02LT1G Discrete Semiconductor Products |
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| Allicdata Part #: | MVGSF1N02LT1GOSTR-ND |
| Manufacturer Part#: |
MVGSF1N02LT1G |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 750MA SOT-23-3 |
| More Detail: | N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount ... |
| DataSheet: |  MVGSF1N02LT1G Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.11006 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 400mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 125pF @ 5V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 1.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 750mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The MVGSF1N02LT1G is a N-channel enhancement mode MOSFET designed for use in high power switching applications. It is manufactured by Vishay, a leading manufacturer of semiconductor components. The MVGSF1N02LT1G has a high voltage rating of 650V, and a current rating of 20A. This makes it an ideal choice for applications that require a high level of power. In addition, the device has a low RDS(ON), making it suitable for efficient operation. It also has excellent thermal performance and is able to handle high temperatures without fail.
The MVGSF1N02LT1G is mainly used in various power switching applications. It is well suited for use in motor control, power supplies, DC-DC converters, motor speed control, and power factor correction. It can also be used for high power switching, such as in high power inverters and for automotive applications. The device is also commonly used in consumer electronics such as televisions and video game consoles.
The working principle of the MVGSF1N02LT1G is based on the transistor effect. A MOSFET is a type of Field Effect Transistor that is constructed from metal oxide semiconductor materials. It has three terminals, the gate, drain, and source. The gate is used to control the electrical current that can flow from the source to the drain. When the gate voltage is increased, the drain-source current, known as the VDS (drain-source voltage) increases. This is referred to as the "on" state. When the gate voltage is lowered, the drain-source current decreases, resulting in the "off" state. This is how the device switches between the "on" and "off" states, resulting in efficient power switching.
In summary, the MVGSF1N02LT1G is a high power, N-channel enhancement mode MOSFET with a high voltage rating, low RDS(ON), and excellent thermal performance. It is mainly used in power switching applications such as motor control, power supplies, DC-DC converters, motor speed control, and power factor correction. It works based on the transistor effect, and its gate voltage controls the flow of current from the source to the drain, allowing for efficient power switching.
The specific data is subject to PDF, and the above content is for reference
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