MVMBF0201NLT1G Discrete Semiconductor Products |
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| Allicdata Part #: | MVMBF0201NLT1GOSTR-ND |
| Manufacturer Part#: |
MVMBF0201NLT1G |
| Price: | $ 0.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 300MA SOT-23-3 |
| More Detail: | N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount ... |
| DataSheet: |  MVMBF0201NLT1G Datasheet/PDF |
| Quantity: | 6000 |
| 3000 +: | $ 0.09073 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -- |
| Power Dissipation (Max): | 225mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 5V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 300mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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MVMBF0201NLT1G Application Field and Working Principle
MVMBF0201NLT1G is a type of low-voltage MOSFET (or Metal-Oxide Semiconductor Field-Effect Transistor) that offers a high performance solution for a wide range of small signal control applications. It is designed to enhance and simplify system design, with its high-speed switching capabilities and robust circuit protection as well as low on-resistance. The device is particularly suitable for applications like high-efficiency power supplies, low-power motor control, voltage regulator modules, and other digital systems. It has a wide range of parameters such as low Gate leakage current, low channel resistance, and low input capacitance, making it a versatile device for many applications.
MVMBF0201NLT1G Working Principle
MVMBF0201NLT1G is a low-voltage enhancement-mode MOSFET, in which the channel conductivity is entirely dependent on the voltage that is applied to the Gate electrode. If a positive voltage is applied to the Gate it creates an inverted inversion layer in the channel, which starts to conduct electrons and allows more current to pass. Therefore, the greater the voltage, the higher the conductivity of the channel and the larger the drain current will be. When the Gate voltage is removed, the inversion layer disperses and the channel turns off. This transition between on and off states allows the device to be used to control current in a circuit.
MVMBF0201NLT1G Applications
MVMBF0201NLT1G is suitable for a wide range of low-voltage applications, such as:
- Switching devices for power electronics systems
- RF power amplifiers and transmitters
- Small-signal MOSFET in DC/DC converters
- Temperature control systems
- Automotive circuit control applications
- Audio amplifiers
- Current sensors and current regulators
Conclusion
MVMBF0201NLT1G is a low-voltage MOSFET with a wide range of parameters and applications. It is suitable for use in a variety of control systems due to its robust design and its relatively high-speed switching. The device is used to control current in a circuit by utilizing the principle of voltage applied to the Gate electrode to create an inverted inversion layer in the channel, allowing more current to pass through.
The specific data is subject to PDF, and the above content is for reference
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