MVSF2N02ELT1G Discrete Semiconductor Products

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MVSF2N02ELT1G is an enhancement-mode Mosfet, single N-channel, low drain-source resistance, low capacitance and low operating voltage. It is specifically designed for operation in Remotely Piloting, Automation and Robotics, Process Control and Automation, Automotive, Aerospace and Radiation, Medical and Other Industrial Applications.

The MVSF2N02ELT1G Mosfet is manufactured using advanced HEXFET power MOSFET process technology specifically designed for improved efficiency in low voltage, power amplifier, logic and switching applications. It is housed in a small, efficient, low package making it ideal for compact, portable and space saving applications.

The main application of the MVSF2N02ELT1G is to switch or amplify electrical signals. It can be used as a switch in a variety of applications where a low drain-source resistance is required such as high performance amplifier or switching applications. It can also be used as a voltage regulator in applications requiring high current handling capability or as an amplifier requiring a low voltage drop. The MVSF2N02ELT1G is also well-suited for applications requiring frequent switching, such as in high speed logic circuits.

The working principle of the MVSF2N02ELT1G is based on the use of an N-channel enhancement-mode Mosfet. The N-channel MOSFET is a four-terminal device, typically consisting of source, drain, gate, and body. The source provides the flux of electrons, while the gate controls the electrical current by regulating the width of the channel between source and drain, which is determined by the voltage applied to the gate. The body is connected to the channel of the n-channel Mosfet and provides return path from the gate. The characteristics of the MOSFET depend on the width and length of the channel and the applied voltage.

When the gate voltage is below the threshold voltage, the MOSFET is off, meaning that the gate does not influence the current flow through the channel. As the gate voltage rises above the threshold voltage, the channel is opened and the current flows between source and drain. This process is called enhancement mode and hence the acronym MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor.

The MVSF2N02ELT1G offers an extremely low on-state resistance of 0.01 ohm. This low resistance contributes to its excellent current flow, especially at higher switching frequencies. The device also features a low input capacitance of 1.5pf and a low coil inductance of 0.5nH, making it suitable for high frequency switching applications.

In addition, the MVSF2N02ELT1G is also very power efficient and has a maximum dissipation rating of up to 5W. This makes it ideal for applications where minimum power loss needs to be maintained. With its low power dissipation and low voltage drop, the MVSF2N02ELT1G is an ideal choice for use in low voltage circuits.

The MVSF2N02ELT1G is also very suitable for use in applications requiring frequent switching. Its low power dissipation and high switching frequency make it ideal for many high speed logic applications. The device also offers a very fast switching and low switching losses, making it ideal for applications where fast switching is necessary.

Overall, the MVSF2N02ELT1G is an excellent choice for applications where low drain source resistance, low capacitance, low operating voltage, high current handling capability and high switching frequency are required. It is ideal for use in a wide range of applications, ranging from automotive and aerospace to medical and robotic applications.

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