MX5KP24AE3

TVS - Diodes are semiconductor devices that can protect sensitive electronic circuits from voltage transients caused by lightning, electrostatic discharge, and other electrical phenomena. The MX5KP24AE3 is an unidirectional 5kW (5, 000 watts) TVS diode with 24V standoff voltage and an ultra-low 18pF capacitance. It is an outstanding transient voltage suppressor (TVS) that is designed to protect electronic circuits from voltage spikes associated with inductive loads and is suitable for a variety of applications.

The MX5KP24AE3 is specifically designed to handle the high-voltage transients found in consumer and industrial power supplies. It has a wide operating temperature range of -55 to +155 degrees Celsius, making it suitable for use in extreme environments. The surge capability of the MX5KP24AE3 is 1kA repetitive peak pulse current which is above the industry standard for components of this type.

The MX5KP24AE3\'s ultra-low capacitance is ideal for protecting high-speed digital circuits such as microprocessors, as capacitance can significantly affect the signal integrity of digital circuits. The low capacitance is achieved using On Semiconductor\'s unique layering process that produces a thin wafer with multiple layers of silicon and metal. This process ensures that the internal capacitance of the TVS diode is eliminated, thus allowing the device to maintain its low profile while still providing superior protection.

In addition to providing superior protection against transient voltage spikes, the MX5KP24AE3 is also capable of handling ESD events up to a maximum of 25kV contact discharge and 8kV air discharge. This makes the device ideal for use in harsh industrial and military environments where high levels of ESD are present. The robust design of the MX5KP24AE3 also ensures that it will remain functional even after multiple transient events.

Working principle of the MX5KP24AE3 is based on avalanche and zener breakdowns. During an overload condition, the TVS diode begins to conduct current and establishes a voltage gradient across its anode and cathode. This causes electrons to be accelerated to high velocities and collide with the valence band electrons, which then become free electrons and holes. These electrons and holes combine to form an avalanche breakdown, allowing the device to conduct further current. The zener breakdown occurs due to an abrupt increase in the electric field across the junction which, in turn, causes electrons to be drawn across the junction and produces electron-hole pairs.

The MX5KP24AE3 is an ideal choice for a variety of applications including industrial power supplies, consumer electronics, telecom equipment, automotive systems, personal computers and others. In addition to providing exceptional protection against voltage transients, the device also offers superior protection against ESD, making it suitable for a wide range of applications. The low capacitance of the MX5KP24AE3 and its wide temperature range make it an ideal choice for protecting sensitive circuitry in extreme environments.