Allicdata Part #: | N0300N-T1B-AT-ND |
Manufacturer Part#: |
N0300N-T1B-AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 4.5A SC96-3 |
More Detail: | N-Channel 30V 4.5A (Ta) 1.25W (Ta) Surface Mount S... |
DataSheet: | N0300N-T1B-AT Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-96 |
Supplier Device Package: | SC-96-3, Thin Mini Mold |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The N0300N-T1B-AT is a single N-channel MOSFET that operates at a single junction temperature called the Ambient Temperature, or “AT.” This MOSFET was specifically designed with optimized performance and robustness at ambient temperature, and its low thermal characteristics ensure reliable and long-lasting operation in this environment.
The N0300N-T1B-AT is a high-voltage power MOSFET that has a VGS of 20V. It features a low Gate-Source capacitance, thus making it ideal for high-frequency applications that require a fast switching transition. It also features a low on-resistance of 0.32 Ohm, allowing for higher current outputs in a much smaller package.
The main application for the N0300N-T1B-AT is in switching and drives systems. In addition, it is designed for high-efficiency power supplies, HVAC equipment, and renewable energy applications. It comes in a surface mount package suitable for automated assembly and can replace discrete MOSFETs in these applications, reducing the parts count and complexity of the circuit.
The working principle is fairly straightforward. The Gate-Source voltage (VGS) controls the on-resistance and on-voltage of the MOSFET. The source pin of the transistor switches between the drain and source pins, and the Gate resistor determines when the Source voltage is high enough to turn on the MOSFET and give it conduction.
The N3000N-T1B-AT has two main types of operation, linear and saturated. In linear operation, the device acts like a resistance element and operates at small VGS. This type of operation is suitable for low-power applications, as the voltage drop across the MOSFET is small. In saturated operation, VGS is increased to the point where the device is fully on and behaves like a current source. This mode is suitable for high-power applications, as the voltage drop across the MOSFET is large.
The N3000N-T1B-AT can be used in a variety of applications. It is suitable for motors, lighting, HVAC systems, renewable energy such as solar and wind, and industrial automation. It can also be used to control valves, pumps and other types of motors that require a high-speed switching signal. Using this device in relay drivers or pwm circuits allow users to control motors in a much more efficient and cost-effective way.
In summary, the N3000N-T1B-AT is a single N-channel MOSFET specifically designed for use at ambient temperature. It is suitable for several types of applications where fast switching and high-efficiency is required. The Gate-Source voltage (VGS) controls the on-resistance and on-voltage of the MOSFET, and the two main types of operation are linear and saturated. This device can operate at a wide range of temperatures and is ideal for motors, lighting, HVAC systems, renewable energy, and industrial automation.
The specific data is subject to PDF, and the above content is for reference
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