Allicdata Part #: | NCP5901BMNTBGOSTR-ND |
Manufacturer Part#: |
NCP5901BMNTBG |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC MOSFET DVR SYNC VR12 8-DFN |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-DFN (2x... |
DataSheet: | NCP5901BMNTBG Datasheet/PDF |
Quantity: | 6000 |
Specifications
Current - Peak Output (Source, Sink): | -- |
Base Part Number: | NCP5901 |
Supplier Device Package: | 8-DFN (2x2) |
Package / Case: | 8-VFDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 16ns, 11ns |
High Side Voltage - Max (Bootstrap): | 35V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.7V, 3.4V |
Voltage - Supply: | 4.5 V ~ 13.2 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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NCP5901BMNTBG is a N-Channel PowerTrench® MOSFET driver for automotive and industrial application and is part of Power Management Integrated Circuit (PMIC - Gate Drivers) family. It is designed to drive high-side and low-side N-Channel MOSFETs in various topologies such as buck and boost. This dual-channel device has a wide power supply range from 4.5 V to 38 V, which also allows it to provide a controlled turn-on and turn-off, reducing the power dissipation and EMI of the system.The NCP5901BMNTBG benefits from an extended safety feature set, including adjustable dead times and demagnetization prevention time that provide an excellent protection to the MOSFETs. This feature set allows the NCP5901BMNTBG to be used as a primary switch in applications requiring IGBTs.Besides its excellent thermal performance, the NCP5901BMNTBG offers a very low supply current which helps to minimize the total power dissipation in the system. Additionally, the NCP5901BMNTBG features a very low propagation delay and a shutdown feature for ease of use.The NCP5901BMNTBG provides a low-ripple current capability that helps to minimize power dissipation and EMI in the system. Additionally, its wide operating temperature range from -40 to +125°C makes it well-suited for industrial and automotive applications.The NCP5901BMNTBG\'s working principle involves the use of two internal N-Channel MOSFETs along with two external N-Channel MOSFETs to create two independent high-side gate drive channels. The two internal MOSFETs are connected in parallel in order to provide a low on-time resistive drop, thus reducing the system\'s power dissipation. The two external MOSFETs are connected in series and used to drive the high-side gate of the application.When the device is in active mode, the two external MOSFETs are connected to the gate of the application MOSFET; the two internal MOSFETs are connected to ground and create a low current path for the high-side gate. This allows for a linear increase in the gate drive voltage, thus reducing the power dissipation of the system. In addition, the device also features adjustable dead time and demagnetization prevention time, making it well-suited for applications requiring IGBTs.The NCP5901BMNTBG is ideal for driving high-side and low-side N-Channel MOSFETs in applications such as buck and boost converters, half-bridge topologies, and other related switching applications. Additionally, its wide power supply range and its low quiescent current make it well-suited for automotive and industrial applications that require high frequency switching.In conclusion, NCP5901BMNTBG is an integrated PowerTrench MOSFET driver for automotive and industrial applications, ideal for driving high-side and low-side N-Channel MOSFETs. It is designed to provide a low on-resistance drop, low-ripple current capabilities, adjustable dead times and demagnetization prevention, thus improving system performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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