Allicdata Part #: | NCP5901DR2GOSTR-ND |
Manufacturer Part#: |
NCP5901DR2G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC MOSFET DVR SYNC VR12 8-SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | NCP5901DR2G Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | -- |
Base Part Number: | NCP5901 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 16ns, 11ns |
High Side Voltage - Max (Bootstrap): | 35V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.7V, 3.4V |
Voltage - Supply: | 4.5 V ~ 13.2 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NCP5901DR2G is a high-sided N-channel MOSFET driver integrated circuit designed to provide a high level of performance and operational robustness. The NCP5901DR2G is part of a family of Gate Drivers products developed by ON Semiconductor and the NCP5901DR2G is the next generation of these products. The NCP5901DR2G belongs to the class of PMIC Gate Drivers and is suitable for use in a wide range of applications requiring high-temperature designs.
The NCP5901DR2G provides high voltage capabilities by making use of the MOSFET in combination with the integrated circuit. The NCP5901DR2G has two operating modes which enable the device to operate in either integrated current limiting or MOSFET ON/OFF control. The NCP5901DR2G also includes a high-selection level shift circuit, enabling the device to work with up to 25V power input voltage. The level shift circuit also allows the device to control different types of MOSFETs, such as P-channel, N-channel, and Power MOSFETs.
The NCP5901DR2G comes with a wide range of features that make it suitable for a number of unique applications, such as in HVAC/R systems, white goods and fan speed control. The device also features an under voltage lockout circuit, which helps in preventing powering up of the device if the input voltage is too low. It also incorporates a programmable current limit control which sets the current limit of the device to match with the design requirements of the system.
The working principle of the NCP5901DR2G is simple. It sends signals to the MOSFET to activate the gate and allow current to flow through the channel. This action is controlled by the gate control signal from the device. The gate control signal from the device can be programmed to operate the gate either in open or close mode. The output current can also be limited based on the applications requirements using the current limit control circuit. The device contains a built-in voltage clamping circuit to prevent over voltage damages to the components.
The NCP5901DR2G offers a highly robust design and efficient performance making it suitable for use in a wide range of applications requiring large voltage swing, fast switching and high current limit control operation. It is suitable for applications requiring high temperature operation, such as HVAC/R systems, motor control and white goods where the device is exposed to ambient temperatures up to 150°C. The device also features options for thermal shutdown and current limit control, which help in protecting it against over triggering or overcurrent.
In conclusion, the NCP5901DR2G is an innovative solution belonging to the PMIC Gate Drivers family that provides a high-quality performance and reliable design for a wide range of applications requiring high voltage, temperature and current protection.
The specific data is subject to PDF, and the above content is for reference
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