NCP81071BDR2G Allicdata Electronics
Allicdata Part #:

NCP81071BDR2GOSTR-ND

Manufacturer Part#:

NCP81071BDR2G

Price: $ 0.39
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC MOSFET DVR HS 5A DUAL 8SOIC
More Detail: Low-Side Gate Driver IC Non-Inverting 8-SOIC
DataSheet: NCP81071BDR2G datasheetNCP81071BDR2G Datasheet/PDF
Quantity: 1000
1 +: $ 0.39000
10 +: $ 0.37830
100 +: $ 0.37050
1000 +: $ 0.36270
10000 +: $ 0.35100
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 20 V
Logic Voltage - VIL, VIH: 1.2V, 1.8V
Current - Peak Output (Source, Sink): 5A, 5A
Input Type: Non-Inverting
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The NCP81071BDR2G is a PMIC (Power Management Integrated Circuit) and Gate Driver chip developed by ON Semiconductor. It is designed to deliver highly efficient, cost-effective power solutions for applications such as Automotive Advanced Driver Assistance Systems, Industrial Motor Control and Building Automation.

This device has a high integration level and advanced features that provide a single, low-cost solution in the design of power stages. It integrates two low side and two high side MOSFET drivers capable of transmitting up to 30V, two additional low side drivers, two pre-drivers, and two push-pull drivers. The integrated pre-drivers and drivers provide an improved level of gate drive capability, providing a higher output voltage, lower power dissipation, as well as better thermal performance. The NCP81071BDR2G also features an integrated oscillator, short-circuit protection and UVLO (undervoltage lockout) for all its components.

The NCP81071BDR2G\'s internal configuration capabilities allows the user to customize the system\'s features and performance, such as dead time programming, gate driver enable/disable and open-drain enable/disable. It also provides flexibility to configure gate driver parameters for optimizing its performance for the application. This integrated device is built with an advanced process technology that helps reduce power dissipation, enabling the design of very cost-effective power stages.

The working principle of NCP81071BDR2G is based on driving the gates of the MOSFETs connected to the power load. This is done using high-side and low-side gate drivers. The gate driver consists of two pre-driver stages connected in parallel. The pre-driver stage then receives its input signal from the controller (MCU) and amplifies it with the help of an external transistor before it is routed to the gate driver. The gate driver amplifies the signal again and then sends it to the MOSFET gate. The shunt resistors located between the gates of the high side and low side MOSFETs detect the current flowing through the power stage. If the resulting voltage is below the threshold voltage, the device will shut-off the MOSFETs. Thus, NCP81071BDR2G protects against short circuits and overcurrent.

Overall, the NCP81071BDR2G is a compact and highly reliable integrated device that provides the user with the flexibility of configuring the system parameters to optimize their performance. Its advanced features, such as the integrated pre-drivers and drivers, provide a higher output voltage, better thermal performance, and cost-effective power solutions. Thus, this PMIC is an excellent choice for a variety of applications including Automotive Advanced Driver Assistance Systems, Industrial Motor Control and Building Automation.

The specific data is subject to PDF, and the above content is for reference

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