NDB5060L Discrete Semiconductor Products |
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| Allicdata Part #: | NDB5060LTR-ND |
| Manufacturer Part#: |
NDB5060L |
| Price: | $ 0.60 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 26A D2PAK |
| More Detail: | N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PA... |
| DataSheet: |  NDB5060L Datasheet/PDF |
| Quantity: | 800 |
| 800 +: | $ 0.54132 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 68W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 30V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The NDB5060L is an enhancement mode power MOSFET (metal oxide semiconductor field effect transistor) that is widely used in various electronic applications. This FET (field effect transistor) is a voltage-driven transistor that relies on the application of a voltage to its gate to control the flow of current through it.
This device is able to operate at high frequencies due to its low input capacitance and low on-resistance. It is well suited for driving power devices such as DC-DC converters, motor drives and other similar applications. The NDB5060L is available in a variety of packages including through hole and surface mount designs.
The NDB5060L is widely used in a variety of power applications. These applications range from automotive to industrial uses. The MOSFET is commonly used in automobile audio systems, HVAC (heating, ventilation, and air conditioning), solar power systems, and power converters for industrial uses. The device is also used for motor drives, power supplies, and audio applications.
The NDB5060L MOSFET works on the principle of enhancement mode operation. This operation involves the application of a voltage to the gate of the device to control the flow of current through it. The voltage applied to the gate is of a relatively low value and yet it has the capacity to govern the current flow. When a DC voltage is applied to the gate of the device, the MOSFET remains in a non-conductive state, until the applied voltage exceeds the threshold voltage of the device. In this state, the gate voltage acts as a control input that regulates the current flow through the device.
For applications involving the operation of the device at higher frequencies, it is recommended to use an insulated gate bipolar transistor (IGBT). This device is an improved version of the MOSFET, as it provides higher switching speeds and an increased ability to operate at higher temperatures and voltages. For applications requiring low voltage control and high current handling capability, the NDB5060L FET can provide efficient operation.
The NDB5060L device is a powerful FET that can sustain a large amount of current and can be used in a variety of applications. The device is available in a range of packages and can be used in both through hole and surface mount designs. The device works on the principle of enhancement mode operation and can be used for high frequency applications. The device is capable of providing low voltage control and a low on-resistance for efficient operation.
The specific data is subject to PDF, and the above content is for reference
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