Allicdata Part #: | NDBA180N10BT4H-ND |
Manufacturer Part#: |
NDBA180N10BT4H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 180A DPAK |
More Detail: | N-Channel 100V 180A (Ta) 200W (Tc) Surface Mount D... |
DataSheet: | NDBA180N10BT4H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V, 15V |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 50A, 15V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6950pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The NDBA180N10BT4H is a Transistors - FETs, MOSFETs - Single device and is used in a variety of applications. It is typically used as an electronic switch, usually in an integrated circuit or other electrical circuit. As a power MOSFET, it has an especially high switching speed, which is beneficial in many applications.The NDBA180N10BT4H is a low power and low voltage integrated circuit, which has been designed for use with consumer electronics. It is commonly used as a power switch in consumer products such as laptops, smartphones, digital cameras and portable devices.The NDBA180N10BT4H is a MOSFET (metal oxide semiconductor field-effect transistor). It is a three terminal device, with its gate, drain, and source terminals. The source terminal is the “input” and the drain terminal is the “output”. The gate terminal is used to control the connection between the drain and source terminals.When the gate terminal is left “floating”, the MOSFET is in a “non conducting” state, which blocks current from flowing between the two other terminals. However, when a voltage is applied to the gate terminal, the device conducts current between the two terminals, effectively switching the flow of power on and off.The NDBA180N10BT4H is a “normally off” device, which means that it remains in the off state until a voltage is applied to the gate terminal. This means that it is especially suited for applications where safety is a concern, as it ensures that there is no current flowing between the terminals unless the device is deliberately switched on.The NDBA180N10BT4H is an FET (field-effect transistor), which is a type of transistor that functions as a voltage-controlled switch. It has an especially high switching speed, which makes it an ideal choice for use as a switch in digital logic circuits.The NDBA180N10BT4H is also known for its low RDS (on resistance), which is a measure of the resistance between the drain and source terminals when the device is conducting. Low RDS devices are more efficient at switching, as they draw less current, which means that they generate less heat.The NDBA180N10BT4H is a popular device and is widely used in industrial, automotive, and consumer applications. It is also used to control motors in robotic systems and in Unmanned Aerial Vehicles (UAVs).In summary, the NDBA180N10BT4H is an FET device that is mainly used as a switch. It is used in a variety of applications, including consumer electronics, robotics and UAVs. It is especially beneficial due to its high switching speed and low RDS. This makes it an ideal choice for applications where safety is a concern and efficiency is paramount.
The specific data is subject to PDF, and the above content is for reference
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