| Allicdata Part #: | NDFPD1N150CGOS-ND |
| Manufacturer Part#: |
NDFPD1N150CG |
| Price: | $ 1.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 1500V 100MA TO220 |
| More Detail: | N-Channel 1500V 100mA (Ta) 2W (Ta), 20W (Tc) Throu... |
| DataSheet: |  NDFPD1N150CG Datasheet/PDF |
| Quantity: | 2581 |
| 1 +: | $ 1.09620 |
| 50 +: | $ 0.92925 |
| 100 +: | $ 0.79172 |
| 500 +: | $ 0.65048 |
| 1000 +: | $ 0.53897 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 30V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 150 Ohm @ 50mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
| Drain to Source Voltage (Vdss): | 1500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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NDFPD1N150CG is a common-gate N-channel enhancement mode MOSFET, which offers a wide range of application within core semiconductor components. It offers a great performance in switching applications and high switching frequencies due to its low threshold voltage of only 1.5V, and its fast switching speed. It is highly suitable for low-voltage switching operations and has a greater current and power density compared to other types of MOSFETs.
Application field
The NDFPD1N150CG can be used in a wide range of applications. It is a reliable MOSFET for high-speed, low-noise switching operations. It can also be used in solar power systems, audio power amplifiers, power supplies, LED lighting, and automotive applications. Additionally, it is suitable for switching applications in telecommunication systems, as well as other power electronic applications.
Working Principle
The working principle of the NDFPD1N150CG is that of traditional MOSFETs. When the Gate is driven to a higher voltage with respect to the source, a channel is formed between the source and drain. This increases the capacitance of the device enabling it to transfer a larger amount of current.
The NDFPD1N150CG has a low threshold voltage, and therefore it can be used for low-voltage switching operations and high-speed switching operations in a variety of applications. Furthermore, the NDFPD1N150CG has a greater current and power density compared to other types of MOSFETs. The device also has a high input capacitance and offers a greater stability compared to other types of MOSFETs.
Key Features
The key features of the NDFPD1N150CG include:
- Low threshold voltage - only 1.5 V.
- High current and power density.
- High input capacitance.
- High switching frequency.
- Greater stability than other types of MOSFETs.
- Suitability for a wide range of applications.
The NDFPD1N150CG is a reliable MOSFET for high-speed, low-noise switching operations. It is perfectly suitable for applications such as telecommunication systems and LED lighting. Additionally, it offers a great performance in switching applications and high switching frequencies due to its low threshold voltage, and its fast switching speed. Moreover, its low threshold voltage, high current and power density make it a reliable and efficient MOSFET suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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