Allicdata Part #: | NDP4050L-ND |
Manufacturer Part#: |
NDP4050L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 15A TO-220 |
More Detail: | N-Channel 50V 15A (Tc) 50W (Tc) Through Hole TO-22... |
DataSheet: | NDP4050L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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The NDP4050L is a N-Channel Power MOSFET designed for high current power management applications. It is an enhancement mode field-effect transistor that operates by creating an inversion layer in the channel of the transistor. This layer is conductive and has a majority charge carrier that is opposite to the channel type. The channel type is chosen for a particular application depending on the voltage requirements, type of circuit and power handling capacity.
The NDP4050L is used as a switching device in various applications including power suppliers, power converters, power amplifiers and motor controllers. A key feature of this Transistor is its low on- resistance, which offers a high current drive up to 4 A switching. It also offers optimum switching performance with low gate charge and fast switching speeds. Moreover, it features low gate threshold and drift, which enhances the overall performance of the device.
The basic working principle of the NDP4050L is to allow or block current flow. When a positive voltage is applied to the gate terminal of the device, the inversion layer is created and a current can flow from the Drain to the Source terminal. The current flow is dependent on the gate to source voltage and the drain-source voltage. If the gate-to-source voltage is low, the transistor acts in the cutoff mode, whereby the flow of current cannot occur. If the gate-to-source voltage is increased, the current flow will be increased as well.
In addition, the NDP4050L also utilizes body-effect to improve its performance. In the process of body-effect, the threshold voltage is increased as the drain-source voltage is increased. This reduces the flow of current in the linear region, thus improving the performance.
The NDP4050L has a wide range of applications that include general purpose switching, battery-operated pulse and burst mode applications, industrial logic gate circuits, motor control and inverter circuits. It is also widely used in power management applications such as DC/DC converters, auxiliary power supply, DC/AC convertors and battery chargers. In addition, it is suited for data transmission, motor control and power line applications as well.
To conclude, the NDP4050L is a N-Channel Power MOSFET designed for power management applications. It provides high efficiency and low on-resistance for fast switching. It utilizes body-effect for improved performance. Furthermore, it has a wide range of applications in motor control, inverters, battery management, power line applications and more.
The specific data is subject to PDF, and the above content is for reference
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