NDS0605 Allicdata Electronics

NDS0605 Discrete Semiconductor Products

Allicdata Part #:

NDS0605TR-ND

Manufacturer Part#:

NDS0605

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 180MA SOT-23P-Channel 60V 180mA (T...
More Detail: N/A
DataSheet: NDS0605 datasheetNDS0605 Datasheet/PDF
Quantity: 20000
Stock 20000Can Ship Immediately
Specifications
Series: NDS0605
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: --
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 79pF @ 25V
FET Feature: --
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: NDS060
Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com


1. General Description

These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

2. Features

    1. −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V

    2. Voltage controlled p-channel small signal switch

    3. High density cell design for low RDS(ON)

    4. High saturation current

3. Pin configuration

     image.png


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