NDS0605 Discrete Semiconductor Products |
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Allicdata Part #: | NDS0605TR-ND |
Manufacturer Part#: |
NDS0605 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 180MA SOT-23P-Channel 60V 180mA (T... |
More Detail: | N/A |
DataSheet: | NDS0605 Datasheet/PDF |
Quantity: | 20000 |
Series: | NDS0605 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 180mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Power - Max: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 79pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Base Part Number: | NDS060 |
Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us: sales@allicdata.com
1. General Description
These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
2. Features
1. −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
2. Voltage controlled p-channel small signal switch
3. High density cell design for low RDS(ON)
4. High saturation current
3. Pin configuration
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