NDT3055L Allicdata Electronics

NDT3055L Discrete Semiconductor Products

Allicdata Part #:

NDT3055LTR-ND

Manufacturer Part#:

NDT3055L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 4A SOT-223-4
More Detail: N-Channel 60V 4A (Ta) 3W (Ta) Surface Mount SOT-22...
DataSheet: NDT3055L datasheetNDT3055L Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NDT3055L is a type of MOSFET - a metal-oxide semiconductor field-effect transistor - that requires only one voltage source for operation. It is a single transistor commonly used for a wide range of applications, from small-signal switching and amplification to high-power operation.

In terms of its operation, a MOSFET operates under the principle of two electric fields. It consists of a metal gate, an insulated gate, and an insulated layer or channel region. The metal gate is exposed to an external electric field, which forms a channel underneath the insulated gate. This channel is known as a channel region, and the majority carriers move through it in an electric field controlled by the applied voltage.

Unlike bipolar transistors, which control current through the manipulation of two p-n junctions, metal on oxide semiconductor field-effect transistors (MOSFETs) rely on just one p-n junction (the metal gate) to control current. The characteristics of a MOSFET depend upon the conductivity of the semiconductor material in the channel region, and voltage applied to the gate. This means that a much less amount of electric power is required for MOSFETs to operate than for other types of transistors.

The NDT3055L is a subset of the MOSFET family and it brings particular advantages in terms of power efficiency, size and cost compared to other types of transistor. It is particularly useful within applications where it is important to switch high-power or high-voltage signals such as in motor control, industrial machinery and power management systems. By switching with the NDT3055L, it is possible to reduce power consumption and dissipate less heat.

In addition, the NDT3055L has fast switching capabilities, which is important for applications with fast rising and falling current levels, typically those found in motor control and digital electronic devices. In motor control systems, for example, using NDT3055L transistors can provide very precise control of operation speed and power.

The operation of the NDT3055L transistor is also highly reliable, meaning it can be used in applications where reliability is of high importance. It is also suited to use in analog and digital applications, meaning it is a versatile component that can be used in applications such as audio-level circuits and wireless systems.

Overall, the NDT3055L is a highly efficient, reliable and cost-effective MOSFET transistor, making it an ideal component for a wide range of applications. Its power efficiency and fast switching capabilities make it well suited to operations such as motor control, industrial machinery, power management systems and many other applications.

The specific data is subject to PDF, and the above content is for reference

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