
Allicdata Part #: | NE34018-A-ND |
Manufacturer Part#: |
NE34018-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 4V 2GHZ SOT-343 |
More Detail: | RF Mosfet HFET 2V 5mA 2GHz 16dB 12dBm SOT-343 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HFET |
Frequency: | 2GHz |
Gain: | 16dB |
Voltage - Test: | 2V |
Current Rating: | 120mA |
Noise Figure: | 0.6dB |
Current - Test: | 5mA |
Power - Output: | 12dBm |
Voltage - Rated: | 4V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | SOT-343 |
Base Part Number: | NE340 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NE34018-A is an advanced monolithic microwave integrated circuit (MMIC) which utilizes a proprietary GaAs high power field effect transistor technology for the demanding high frequency applications. The NE34018-A provides a very high gain, low noise amplifier with unmatched performance over a wide dynamic range across the RF spectrum. The NE34018-A can be used in a variety of applications requiring enhanced dynamic range performance such as high power or multimode power amplifiers, amplifiers with multiple gain stages, and amplifiers with very high input/output impedance matching.The NE34018-A is designed with a proprietary RF transistor structure that provides a high gain, low noise, and wide dynamic range characteristics at microwave frequencies. The device utilizes a depletion mode lateral DMOS style transistor which is designed to have highly linear characteristics and low noise. This technology reduces the need for external components such as resistors and capacitors for proper operation.The NE34018-A is a high gain and high power integrated device which utilizes a unique active region design of its RF transistors to provide very high output power. The device has a single-ended gate configuration which results in a highly efficient amplifier with a high gain and low power dissipation and low noise figure.The NE34018-A is designed to meet the demanding requirements of a wide variety of applications including base stations, power amplifiers, and high power point-to-point radio links. It features a self-biased structure which eliminates the need for an external bias and provides superior linearity, gain, and noise performance. The device also has an integrated feedback loop which enables it to be used as a linear amplifier with a wide dynamic range.The NE34018-A also supports a wide range of applications due to its high input/output impedance matching ability. Its wide dynamic range and high gain characteristics allow the device to be used in a variety of applications, such as high power point-to-point radio links, base stations, and power amplifiers.The NE34018-A is an advanced MMIC which has been designed to handle the most challenging requirements of RF applications. The device is highly reliable and provides exceptional performance over a wide range of frequencies. Its easy to use design allows it to be used in a variety of applications, making it an ideal choice for high power and dynamic range applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
NE34018-T1 | CEL | -- | 1000 | FET RF 4V 2GHZ SOT-343RF ... |
NE34018-EVGA19 | CEL | 0.0 $ | 1000 | EVAL BOARD NE34018 1.9GHZ |
NE34018-A | CEL | 0.0 $ | 1000 | FET RF 4V 2GHZ SOT-343RF ... |
NE34018-64-A | CEL | 0.0 $ | 1000 | FET RF 4V 2GHZ SOT-343RF ... |
NE34018-EVNF19 | CEL | 0.0 $ | 1000 | EVAL BOARD FOR NE34018 1.... |
NE34018-T1-64-A | CEL | 0.0 $ | 1000 | FET RF 4V 2GHZ SOT-343RF ... |
NE34018-T1-A | CEL | -- | 1000 | FET RF 4V 2GHZ SOT-343RF ... |
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