NE34018-T1-64-A Allicdata Electronics
Allicdata Part #:

NE34018-T1-64-A-ND

Manufacturer Part#:

NE34018-T1-64-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: FET RF 4V 2GHZ SOT-343
More Detail: RF Mosfet HFET 2V 5mA 2GHz 16dB 12dBm SOT-343
DataSheet: NE34018-T1-64-A datasheetNE34018-T1-64-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: HFET
Frequency: 2GHz
Gain: 16dB
Voltage - Test: 2V
Current Rating: 120mA
Noise Figure: 0.6dB
Current - Test: 5mA
Power - Output: 12dBm
Voltage - Rated: 4V
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Base Part Number: NE340
Description

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The NE34018-T1-64-A is an advanced N-channel MOSFET device from a leading manufacturer of field effect transistors. It is designed for use in a wide range of RF applications such as power amplifiers and switching applications. With its high performance, advanced features, and great value for money, the NE34018-T1-64-A is a popular choice for many applications in the consumer, industrial and professional arenas.

The NE34018-T1-64-A has two distinct characteristics that make it an attractive choice. The first is its excellent power handling capabilities. It is capable of supporting up to 24 watts of continuous output power at 40 VDS and up to 60 watts at 50 VDS. This is more than enough for most RF applications and ensures high reliability and consistent performance even in demanding settings. In addition, the NE34018-T1-64-A has a minimum breakdown voltage of 95V, which makes it ideal for higher voltage applications. It also has excellent channel-to-drain current transfer characteristics, allowing for low insertion and excellent return losses.

The second advantage of the NE34018-T1-64-A is its versatility. It is capable of operating in a wide range of conditions and is highly tolerant to bias shifts. This makes it ideal for applications that require both low and high RF power handling capabilities. Additionally, it is capable of operating in a broad range of temperatures and has a high immunity to noise and other environmental factors. This allows it to be used in a range of settings, from controlled climates to outdoor applications. In addition, the NE34018-T1-64-A has a robust package designed for easy mounting and reliable operation.

The NE34018-T1-64-A works using the principle of field effect transistor (FET) technology. In essence, an electric field is established between a gate and a source terminal. This field, when combined with a drain-source voltage and a source current, produces a controlled current between the two terminals. This current can be adjusted by varying the gate voltage, which in turn makes the device capable of producing an output signal with an adjustable frequency, gain and phase response. This makes the device highly suitable for RF applications. It is also capable of providing a low noise figure and a high linearity, making it ideal for modern communication applications.

Overall, the NE34018-T1-64-A is a highly versatile field effect transistor device that is ideal for a range of RF-based applications. Its excellent power handling capabilities, fast switching time, and robust construction make it an ideal choice for a variety of applications. Its wide range of environmental tolerance and superb linearity features make it an excellent choice for communications, measurement, and radio frequency applications.

In conclusion, the NE34018-T1-64-A is an advanced field effect transistor device designed for a wide range of RF applications. Its excellent power handling capabilities, fast switching times, superior linearity, and wide range of environmental tolerances make it a great choice for many applications. It is also a cost effective option that provides consistent, reliable performance in demanding conditions. The NE34018-T1-64-A is a great field effect transistor device for many applications.

The specific data is subject to PDF, and the above content is for reference

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