NE34018-T1-A Allicdata Electronics

NE34018-T1-A Discrete Semiconductor Products

Allicdata Part #:

NE34018-ATR-ND

Manufacturer Part#:

NE34018-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: FET RF 4V 2GHZ SOT-343
More Detail: RF Mosfet HFET 2V 5mA 2GHz 16dB 12dBm SOT-343
DataSheet: NE34018-T1-A datasheetNE34018-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: HFET
Frequency: 2GHz
Gain: 16dB
Voltage - Test: 2V
Current Rating: 120mA
Noise Figure: 0.6dB
Current - Test: 5mA
Power - Output: 12dBm
Voltage - Rated: 4V
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Base Part Number: NE340
Description

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The NE34018-T1-A is an RF transistor operating under high-frequency switching and amplifying applications. It is a type of Field-Effect Transistor (FET). It is a dual-gate MOSFET (metal-oxide-semiconductor FET) designed to provide enhanced high-frequency operation. The NE34018-T1-A is manufactured by NXP Semiconductors and is a part of their wide range of FETs & MOSFETs.

FETs, in general, are excellent components for frequency range performance and for wide bandwidth packages. This makes them suitable for operations in low noise, high frequency, and low power consumption. In comparison to the bipolar transistors, FETs have the advantage of having a low impedance gate and superior current-voltage characteristics. This makes them ideal for RF applications. FETs are also low cost, providing an advantage to customers.

The NE34018-T1-A has a wide variety of applications. It is ideal in high-frequency switching and amplifying applications. It can also be used in microwave radio amplifying applications. This FET is capable of providing high-frequency switching with reduced losses and distortion. It is also reliable in circuit designs with high power, high current, and low frequency performance.

The NE34018-T1-A has a distinct working principle. It is made up of two gate terminals which control the carrier flow from source to the drain. As the voltage applied to the gates increases, the current flow from source to drain increases as well. This makes it a highly dependable component in high-frequency switching. The gate terminals also control the voltage drop across the channel, which allows for precise control over the channel.

The NE34018-T1-A is also equipped with a variable-current source that modulates the current flowing through the device. This makes the FET suitable for applications requiring high gain, high linearity, low noise, and high efficiency. The high-frequency characteristics of the NE34018-T1-A make it ideal for use in applications such as high-frequency switches, microwave radio amplifiers, antenna amplifiers, and switching power supplies.

The NE34018-T1-A is an excellent RF transistor for its wide range of applications and its reliable working principle. It also offers great performance in its operations for high-frequency switches, microwave radio amplifiers, antenna amplifiers, and switching power supplies. The NE34018-T1-A from NXP Semiconductors is an ideal choice for many high-frequency applications. It is a reliable, cost-effective choice for customers in need of a reliable transistor for their project.

The specific data is subject to PDF, and the above content is for reference

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