NE6510179A-A

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The NE6510179A-A is a metal-oxide semiconductor field-effect transistor (MOSFET) designed for radio frequency (RF) applications. It is an enhanced version of the NE6510179. It has a wide RF frequency range, low power dissipation and small die size, making it well suited for various high-performance RF applications.

The NE6510179A-A operates with a voltage of 2 V (Vcc). This voltage is sufficient for the transistor to switch on and off quickly, without the need for complex control circuitry. The device also works well at low voltages, making it an ideal choice for battery-powered applications.

The NE6510179A-A features a wide RF frequency range from low (3.3 MHz) to high (8 GHz). This means that it can be used in a variety of radio applications, from simple FM transmitters to complex military radios. It is also suitable for both indoor and outdoor purposes. The device has a low power dissipation of 0.25 W, which allows it to operate at low voltages, making it an ideal choice for battery-powered applications.

The NE6510179A-A is a small die size, allowing it to fit into small packages and reducing the overall size of the circuit. This makes it suitable for space constrained layouts. The device also has a wide temperature range, allowing it to be used in extreme temperatures. The NE6510179A-A is therefore an ideal choice for high-performance, reliable and long-life RF applications.

The working principle of the NE6510179A-A is simple. This transistor has two input terminals – gate and source and two output terminals – drain and source. When a voltage (Vgs) is applied to the gate terminal, a channel is created between the source and the drain. This channel effectively acts as a resistor, allowing current to flow between the source and the drain. The size of the channel is proportional to the magnitude of the voltage applied to the gate terminal. In this way, the NE6510179A-A can be used to control the current flow from the source to the drain.

The NE6510179A-A can be used in a variety of radio frequency applications including high-frequency and low-frequency amplifiers, mixers, oscillators, transmitters and for signal generation. It can also be used in analog and digital circuits, data converters and signal transducers. The device has a wide range of operating temperature, which makes it suitable for a variety of industrial and consumer applications.

In conclusion, the NE6510179A-A is an ideal choice for a wide range of high-performance RF applications. It has a wide frequency range, low power dissipation, small die size and a wide temperature range. This makes it suitable for both indoor and outdoor applications. The device operates with a voltage of 2 V, allowing it to operate at low voltages, making it an ideal choice for battery-powered applications. It also has a wide operating temperature, allowing it to be used in extreme temperatures. The NE6510179A-A is therefore an ideal choice for high-performance, reliable and long-life RF applications.

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