NE651R479A-T1-A

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The NE651R479A-T1-A is a N-channel enhancement-mode gallium nitride (eGaN®) field-effect transistor (FET). As a power MOSFET, it offers an improved alternative to silicon-based FETs with higher efficiency, higher power density, and wider bandwidth. This particular device has a maximum drain current of 500mA, a 3V gate threshold voltage, and an on-resistance RDS(ON) of less than 1.5Ω. It is suitable for applications such as wireless power amplifiers, rf switches, and high-efficiency power supplies.

The NE651R479A-T1-A uses eGaN technology, which offers distinct advantages over traditional silicon-based MOSFETs. Compared to silicon, eGaN FETs provide higher operating frequency and device Bandwidth. This makes them ideal for radio-frequency (RF) applications, where they are used as switches and power amplifiers in telecommunications, broadcasting, and television transmitters. eGaN FETs also feature extremely low on-resistance, resulting in lower power dissipation and higher efficiency in switching and power supplies.

The working principle of the device is similar to that of a traditional MOSFET. When the gate-source voltage reaches a certain threshold, the transistor switches on and current begins to flow from the source to the drain. This causes a voltage drop across the channel, which can be used to control the current through the device. This flow of current is known as “pinch-off”, and is used to regulate the current flow in the device.

In addition to its improved performance, the NE651R479A-T1-A also offers additional advantages over conventional silicon-based devices. It operates with a relatively low gate-source voltage of 3V, which makes it ideal for low-power applications. Furthermore, the NE651R479A-T1-A is highly temperature stable, with no appreciable signal degradation at higher operating temperatures. This makes it suitable for a wide range of applications, including automotive, consumer and industrial, and medical applications.

Overall, the NE651R479A-T1-A is a versatile and advanced power transistor that offers a range of benefits, including higher efficiency and power density, as well as wide operating temperature. It is well suited to RF applications, due to its high bandwidth, low on-resistance, and temperature stability, making it a great choice for high-frequency transmitter and power amplifier designs.

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