NE651R479A-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	HFET
Frequency:	1.9GHz
Gain:	12dB
Voltage - Test:	3.5V
Current Rating:	1A
Noise Figure:	--
Current - Test:	50mA
Power - Output:	27dBm
Voltage - Rated:	8V
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	79A

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NE651R479A-A Application Field and Working Principle

The NE651R479A-A is a RF transistor designed for a variety of applications including cell phones, base stations, and industrial communications. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a number of features that make it a great choice for power amplifying duties such as high-frequencypower amplifiers and linear energy amplifiers. The NE651R479A-A offers excellent power handling ability, superior linearintrinsic gain, low noise figures, low distortion, and more. It has been designed to be a high-efficiency device capable of passing high-frequency signals without distortion or noise. It is also capable of withstanding high currents and is a particularly good choice for applications such as radiofrequency power amplifiers. The NE651R479A-A works by using a voltage to control the flow of electrons through a semi-conductor material. This is done by changing the amount of current passing through the transistor and allowing electrons to pass through in an orderly fashion. The transistor utilizes an oxide material between the base and the gate, called the gate oxide, which changes its resistance depending on the amount of voltage applied. This gate oxide helps to control the flow of electrons and is what allows the transistor to achieve its high power handling capacity. The gate oxide also makes it possible for the transistor to function as an amplifier. In this mode, the voltage applied to one side of the transistor is amplified and passed to the other side. This makes the NE651R479A-A a great choice for applications such as linear amplifiers and radio frequency amplifiers.The NE651R479A-A is especially useful in applications where high power handling is required but with little distortion. It also has a wide range of working temperatures and is capable of withstanding temperatures ranging from -40°C to 125°C. This makes it suitable for many industrial and consumer applications. The NE651R479A-A is an excellent choice for many RF applications due to its high power handling capacity and its superior linear gain, low noise figures and low distortion. These features make it a great choice for applications such as radio frequency power amplifiers and linear energy amplifiers.

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