NE67718-A

Series:	--
Packaging:	Strip
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	15GHz
Noise Figure (dB Typ @ f):	1.7dB @ 2GHz
Gain:	15dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 20mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	--

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NE67718-A Application Field and Working Principle

NE67718-A transistors are classified as Bipolar Junction Transistors, or BJT, and more specifically, Radio Frequency (RF) transistors. These types of transistors are used for amplifying low level signals and frequencies in the RF spectrum. NE67718-A transistors are commonly used in radios, televisions, telephones, and other communications devices, as well as in medical, numerical, and test equipment. The NE67718-A transconductance transistor is a single-stage hand-held bipolar junction transistor (BJT) containing two NPN transistors. These transistors are able to handle larger power transfers as compared to their PNP counter parts, making them ideal for use in power amplifying tasks. Due to their high frequency response, these transistors are also well suited for use in RF applications. It is important to note that due to the complexity of the structure of this type of transistor, it can be difficult for a novice to understand its operation. This section will cover the basic principles of operation for the NE67718-A transistor. The NE67718-A is a voltage-controlled device with a gain controlled by the voltage applied to its base-emitter junction. The transistor works by allowing a current to flow from the base to the collector when the base is forward biased. The current flowing from the base to the collector is then amplified by the transistor, thus amplifying the signal. To understand how this process works, consider the diagrams above. In the first diagram, current is flowing through the emitter, the base, and then the collector. The second diagram shows the same circuit however, a voltage is applied to the base-emitter junction, making it forward biased. This causes electrons to flow from the collector to the base, and then the amplified current flows from the base to the collector. The current amplification factor of the NE67718-A transistor is determined by the ratio of the collector current to the base current, a term known as the gain of the transistor. The more voltage applied to the base-emitter junction, the greater the gain of the transistor, therefore increasing the current amplification. In summary, the NE67718-A transistor is a voltage-controlled device with a gain controlled by the voltage applied to its base-emitter junction. The gain of the transistor determines the amount of current amplification and is directly proportional to the voltage applied to the base-emitter junction. The NE67718-A transistor is used in applications requiring a high frequency response such as radios, televisions, telephones, and other communications devices, as well as in medical, numerical, and test equipment.

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