Allicdata Part #: | NE67839-A-ND |
Manufacturer Part#: |
NE67839-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-143 |
More Detail: | RF Transistor NPN 6V 100mA 12GHz 200mW Surface Mou... |
DataSheet: | NE67839-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Strip |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 6V |
Frequency - Transition: | 12GHz |
Noise Figure (dB Typ @ f): | 1.5dB @ 2GHz |
Gain: | 10dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 30mA, 3V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | -- |
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.The NE67839-A transistors are a type of bipolar junction transistor (BJT) designed for RF applications. They are commonly used in RF transmitters, receivers, and other wireless communication equipment.
A Bipolar Junction Transistor (BJT) is a three-terminal active component that uses two p-n junctions to control the flow of current in an electrical circuit. The two p-n junctions are separated by a thin layer of p-type semiconductor material. The three terminals are the emitter, collector and base of the transistor. The emitter and collector are connected to a voltage source and the base is connected to a current source.
The NE67839-A transistors are designed to operate in a wide range of frequencies and power levels. They are capable of delivering power levels up to 5 watts, with a cutoff frequency of up to 400 MHz. The transistors have a low noise figure and high gain making them ideal for RF applications such as amplifiers, oscillators, and mixers.
The basic working principle of the NE67839-A transistors is very simple. The current flowing through the collector is determined by the voltage applied across the base-emitter. This voltage controls the base current, which in turn controls the collector current. The collector current then passes through the load connected to the collector terminal. The NE67839-A transistors also have an internal feedback circuit, which ensures stability and consistent performance.
The NE67839-A transistors are available in a variety of packages and configurations. Some of the most popular packages include surface mount and through-hole devices. The transistors can also be used in combination with other components to create custom circuits that are tailor-made to specific applications. The transistors are commonly used in radio frequency (RF) and microwave applications such as satellite communications systems, radio telemetry systems, cellular phone base stations, and many other wireless communication systems.
The NE67839-A transistors are a reliable and cost-effective choice for wireless and RF applications. They are designed for high frequency and power levels, offer low noise figures and high gain, and are available in a variety of configurations and packages. They are also easily mass produced, making them a popular choice for a wide range of commercial, industrial, and military applications.
The specific data is subject to PDF, and the above content is for reference
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