NE677M04-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	15GHz
Noise Figure (dB Typ @ f):	1.7dB @ 2GHz
Gain:	16dB
Power - Max:	205mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 20mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	SOT-343F

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NE677M04-A Application Field and Working Principle

NE677M04-A is a type of complementary Metal Oxide Semiconductor (CMOS) transistor, which falls under the Bipolar Junction Transistors (BJTs) of radio frequency (RF) characteristics. With a collector-base breakdown voltage of 50 V, it is usually used in applications where high speed, low power, and high gain are key factors. The main components of NE677M04-A transistors are a collector, an emitter and a base. All resistive and voltage controlled devices within this type of transistor, including bipolar transistors, FETs and SCRs, rely on the PN junction to work. The PN junction is a semiconductor device with two differently doped semiconductors facing each other. When these two semiconductors are connected through the base of the transistor, this junction can be used to control the current and voltage flow in the transistor. As the current flow from the collector to the emitter increases, the voltage between the base and collector increase as well. The current in the base to collector junction varies because of this voltage increase, and in turn, this varies the collector current. In other words, this means that a small amount of current and voltage at the base can control the much larger current and voltage flowing through the collector and emitter. As the voltage between the base and collector increases, the gain of the transistor increases as well.When talking about the electrical characteristics of the NE677M04-A, it has a gain of between 50 and 1000 at a frequency of 350 MHz. It also posses a low saturation voltage of between 0.2 and 0.6 volts, and it has an input capacitance of between 10 and 18 pF. In terms of its main uses, NE677M04-A is commonly used for devices such as radio, television and satellite communications. It is also widely used in wireless devices such as Bluetooth, Wi-Fi and microwave equipment. Such devices rely on efficient and accurate transmission of high frequencies. Accordingly, NE677M04-A transistors are used to amplify the signal so that it can reach the necessary frequency level. In conclusion, NE677M04-A is a type of RF transistor with a high gain, low power consumption and high speed. It has a wide usage in radio, television and wireless communication devices. It is a type of PN junction device, where voltage and resistance control the current flow of the transistor. It has a gain of between 50 and 1000 at a frequency of 350 MHz, a low saturation voltage of between 0.2 and 0.6 volts, and an input capacitance of between 10 and 18 pF.

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