NE67818-A

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The NE67818-A is a bipolar junction transistor (BJT) designed and manufactured especially for use in radio frequency (RF) applications. The low-noise active element of the NE67818-A makes it suitable for use in communication systems and amplifiers, such as preamplifiers, for radio industries and instrumentation amplifiers.

This RF BJT has an operating frequency range from 10 kHz to 3 GHz, making it suitable for use in high-frequency applications. It has a low noise figure of 1.4 dB and low power consumption of 1.75 mA for various radio communication systems. The maximum power dissipation of this device is 500 mA and it has a high base common-emitter gain of 21 dB.

The NE67818-A has an active junction area of 0.5 μm and its low avalanche noise (LNA) enables efficient signal processing and superior RF performance. The electrical characteristics of the NE67818-A are stable with temperature variations and its wide forward current range provides excellent linearity. It has a wide power supply range of -5V to 6V with a maximum current gain of 30 at 250 mA collector current.

The design of the NE67818-A incorporates a dual-gate oxide-isolated structure and a P-type substrate which results in low noise and low power consumption. The device is fabricated using a proprietary silicon-germanium (SiGe) process and its low-noise and low-power performance are enhanced by the P-type substrate. The device also has a high dynamic range of 80 dB.

The NE67818-A is ideal for use in RF communication systems, instrumentation amplifiers and preamplifiers. It is designed to be used in low-noise and wideband layouts, including fixed frequency and broadcasting applications. It is also suitable for use in combination with other BJTs or MOSFETs with an output resistance of 10Ω or higher. The NE67818-A can be connected with a microcontroller using external control signals for cloud-based radio communications.

In conclusion, the NE67818-A is an RF BJT designed for use in radio communication systems and instrumentation amplifier preamplifiers. It has a low noise figure of 1.4 dB and a low power consumption of 1.75 mA. It is fabricated using a proprietary SiGe process and has a wide power supply range of -5V to 6V. Its low noise and low power performance are further enhanced by the P-type substrate and the device has a high dynamic range of 80 dB. The NE67818-A is ideal for use in low-noise and wideband circuits.

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