NE678M04-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	12GHz
Noise Figure (dB Typ @ f):	1.7dB @ 2GHz
Gain:	13.5dB
Power - Max:	205mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 30mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	SOT-343F
Base Part Number:	NE678

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NE678M04-A is a Bipolar Transistor designed specifically for radio frequency (RF) signals and applications. Many power amplifiers, oscillators, and radio receivers use this type of transistor. Working PrincipleAt the core of the NE678M04-A is a epitaxial field effect transistor with a single-stage, series-connected common-collector amplifier. The transistor is composed of two junctions – an emitter and a collector. The emitter releases electrons when forward-biased by a voltage, and the collector collects those electrons when reverse-biased by a voltage. The electrons released by the emitter travel through the circuit and create a current flow. This current creates a flow of electrons from the collector back to the emitter. The NE678M04-A works by using its junctions to control the current flow and the resulting voltage drop across the collector. When the voltage applied to the emitter is greater than that applied to the collector, the transistor is “forward-biased”. In this case, the current flow through the transistor will be proportional to the amount of voltage applied to the emitter. Conversely, when the voltage applied to the collector is greater than that applied to the emitter, the transistor is “reverse-biased” and the current flow will be reduced. The transistor’s collector current is determined by the current gain of the transistor, and can be controlled by changing the applied voltage or current to the emitter. In addition, the transistor can be used to amplify signals by allowing a small input current to yield a much larger output current.ApplicationsThe NE678M04-A is most often used for power amplification, oscillators, and radio receivers. As a power amplifier, it can provide an output power greater than 100 watts, making it suitable for use in high-power applications. As an oscillator, the NE678M04-A can be used to create an oscillating voltage, current, or frequency at any given frequency. As a radio receiver, the NE678M04-A can be used to receive RF signals and convert them into electrical signals that can be processed by a microcontroller or other embedded system.The NE678M04-A is also used in automotive applications such as fuel injection systems, engine control systems, and ABS (anti-lock braking system) control systems. Additionally, the NE678M04-A is often used in telecommunications, satellite navigation, and instrumentation applications.ConclusionThe NE678M04-A is a high-performance bipolar transistor designed specifically for radio frequency applications. With its single-stage common-collector amplifier, it can be used for power amplification, oscillators, and radio receivers. Additionally, it’s often used in automotive, telecommunications, and instrumentation applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description