NE67739-T1-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NE67739T1A is a high performance, low noise, discreet NPN transistor. It is a type of field effect transistors (FETs) and it is also called a monolithic bipolar junction transistor (BJT). While FETs are generally used for amplified signal applications, BJTs are mainly used for switching applications. The NE67739T1A is suitable for both types of applications.

The NE67739T1A is a dual-gate junction FET (DJJFET) which has the ability to operate in the RF and microwave frequency range. It consists of a source gate and a drain gate that are biased in opposite polarity and serve as two independent fields for controlling the current flow through the device. This arrangement allows for the device to be used in both linear and switching applications.

The NE67739T1A is designed for use in RF receivers and transmitters, as well as in high frequency switching applications. It has excellent isolation characteristics, and its large input capacitance allows for high sensitivity. It is also capable of high-voltage operation and can handle high current levels. The NE67739T1A is further characterized by low harmonic distortion, low third order intercept point, high current gain and high input impedance, making it ideal for these applications.

The NE67739T1A works through the process of field effect transistor biasing. When a voltage is applied to the source and drain gates, the transistor is turned on or off depending on the bias voltage. When the voltage is turned on, a current is allowed to pass from the drain to the source and the transistor is in its on state. Conversely, when the voltage is turned off, the current is blocked and the transistor is in its off state. This current flow is what allows the NE67739T1A to be used for both linear and switching applications.

In linear applications, the NE67739T1A is used to amplify signals. It works by adjusting the voltage applied to the source and drain gates to control the current. By manipulating the amount of current that passes through the device, the signal can be amplified or attenuated as desired.

In switching applications, the NE67739T1A is used to control the flow of current between its source and drain terminals. The device works by using the field effect transistor biasing method to block or allow currents. By adjusting the applied voltage to either on or off, the device can act as an on-off switch or a logic gate.

The NE67739T1A is an excellent choice for various RF applications such as amplifiers, transmitters, receivers and high frequency switching. It has excellent isolation characteristics and its large input capacitance makes it suitable for high sensitivity applications. It is characterized by low harmonic distortion and a high current gain and input impedance, making it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference