NGB8202ANTF4G

Vce(on) (Max) @ Vge, Ic:	1.9V @ 4.5V, 20A
Supplier Device Package:	D2PAK-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	300V, 9A, 1 kOhm, 5V
Td (on/off) @ 25°C:	-/5µs
Input Type:	Logic
Switching Energy:	--
Power - Max:	150W
Series:	--
Current - Collector Pulsed (Icm):	50A
Current - Collector (Ic) (Max):	20A
Voltage - Collector Emitter Breakdown (Max):	440V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to NGB8202ANTF4G

NGB8202ANTF4G is a high voltage, low conduction loss, and fast switching power transistor. It is intended for motor control applications such as those found in industrial and automotive equipment. This type of transistor is categorized as a single Insulated Gate Bipolar Transistor (IGBT). It consists of a N-channel vertical DMOS transistor and P-channel vertical DMOS transistor integrated together on one chip. It is excellent in terms of low switching losses, improved noise performance, low on-voltage and high efficiency when compared to similar power transistors.

Application field of NGB8202ANTF4G

NGB8202ANTF4G transistors are used in many applications including motor control, motor drives, lighting control, appliance control and home security systems. The NGB8202ANTF4G is a perfect solution for motor control applications because of its fast switching time and its ability to control large currents. It is also used in variable speed drives, inverters and other applications that require precise control of the current. In addition, this type of transistor is ideal for applications that require a high voltage handling capability, such as power conversion systems.

Working principle of NGB8202ANTF4G

NGB8202ANTF4G transistors work based on the principle of an Insulated Gate Bipolar Transistor (IGBT). It has two transistors that are integrated together on one chip. The N-channel DMOS FET is connected at the gate, and the P-channel DMOS FET is connected to the source. When the gate voltage is increased beyond a certain value, the N-channel transistor is turned on, and current can flow from source to drain. This increases the voltage drop across the P-channel FET and turns it on, allowing current to flow from the gate to the source. When the gate voltage is reversed, the N-channel transistor is turned off and the P-channel FET is turned off. This effectively cuts off the flow of current from the source to the drain.

Conclusion

NGB8202ANTF4G is a high voltage, fast switching power transistor that can be used in many applications such as motor control, motor drives, lighting control, and appliance control. It has low switching losses, improved noise performance, low on-voltage and high efficiency when compared to similar power transistors. This type of transistor is built using the principle of an Insulated Gate Bipolar Transistor (IGBT), containing two transistors integrated together on one chip. In conclusion, NGB8202ANTF4G offers excellent performance and low power losses, making it an ideal choice for many power-related applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description