NGB8204NT4G Discrete Semiconductor Products |
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Allicdata Part #: | NGB8204NT4G-ND |
Manufacturer Part#: |
NGB8204NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 430V 18A 115W D2PAK |
More Detail: | IGBT 430V 18A 115W Surface Mount D2PAK |
DataSheet: | NGB8204NT4G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 115W |
Base Part Number: | NGB8204 |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Input Type: | Logic |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 4V, 15A |
Current - Collector Pulsed (Icm): | 50A |
Current - Collector (Ic) (Max): | 18A |
Voltage - Collector Emitter Breakdown (Max): | 430V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are electrical components that provide the ability to amplify, switch, and provide current flow to circuits. IGBTs (insulated gate bipolar transistors) are a type of transistor that offer similar benefits to traditional transistors with some added performance advantages. The NGB8204NT4G is a single IGBT designed for applications in motor control, static inverters, and power supplies. In this article, we will discuss the application fields and working principles of this device.
Application Field of NGB8204NT4G
The NGB8204NT4G has a wide range of applications due to its high-performance and long-term reliability. It is an ideal choice for motor control applications, such as motor controllers, servo amplifiers, and compressor motor control, and for static inverters for AC and rectifiers for DC, including three-phase rectifiers, AC voltage-stabilized power sources, and DC-AC inverters. It is also suitable for battery and power systems with high switching-frequency capacity, such as automotive power supplies, battery chargers, and power adapters.
Working Principle of NGB8204NT4G
The NGB8204NT4G is an insulated gate bipolar transistor (IGBT) which combines the benefits of MOSFETs and bipolar transistors to offer superior performance and efficiency. The device works by combining the high-current capabilities of bipolar transistors with the fast switching speed and lower on-state voltage drop of MOSFETs. It contains a gate that is insulated from the device’s semiconductor material, which allows for greater control over the current flow through the device. When a voltage is applied to the gate of the device, the voltage induces a high electric field into the gate oxide, which in turn causes electrons to be pulled from the drain and source terminals. This creates an inversion channel between the drain and source, allowing for the conduction of current between them.
The NGB8204NT4G is rated at 800V and offers low gate charge and low on-state resistance. The device is rated to handle up to 150A of continuous current and 40A of peak current. It also offers high immunity to short circuits and has an operating temperature range of -40°C to 150°C.
Conclusion
The NGB8204NT4G is a single IGBT designed for motor control, static inverters, and power supplies. It offers superior performance and efficiency by combining the benefits of MOSFETs and bipolar transistors. It is rated at 800V and offers low gate charge, low on-state resistance, and high immunity to short circuits. It can handle up to 150A of continuous current and 40A of peak current and has an operating temperature range of -40°C to 150°C.
The specific data is subject to PDF, and the above content is for reference
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