NGB8204NT4 Discrete Semiconductor Products

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NGB8204NT4 is a single IGBT (Insulated Gate Bipolar Transistor) device designed for a wide range of applications. It is manufactured by Fairchild Semiconductor based in the United States of America. The IGBT consists of a Field-Effect Transistor (FET) embedded in the center of a Bipolar Transistor structure. This combination of transistors allows NGB8204NT4 to offer advantages over traditional discrete transistors and MOSFETs in terms of switching speed, operating temperature, and power dissipation.

NGB8204NT4 is used as an electrically-controlled switch in applications such as AC motor control, UPS systems, HVAC systems, solenoids, and electrical vehicle motors. It can also be used in audio amplifiers and other audio applications. Additionally, the device can be used as a switch in industrial machinery, lighting systems, medical equipment, and other applications.

The NGB8204NT4 IGBT device is capable of operating at a current level of 150A (peak) and a voltage of 600V. It has a maximum operating junction temperature of –55°C to +175°C for easy and durable operation in a variety of temperatures. The device also offers high efficiency due to its low switching losses, allowing the user to be more cost-efficient in their projects.

The working principle of NGB8204NT4 is vastly different from traditional transistors and MOSFETs. The IGBT uses the power of an insulated gate with a bipolar junction, which results in improved switching speed, temperature, and power dissipation. The device’s insulated gate helps to keep “swing-through” current at a low level to reduce switching loss, while the bipolar junction improves static characteristics and enhances speed performance.

The NGB8204NT4 device’s unique combination of fast switching speed, low losses, and high current capabilities makes it the ideal choice for applications requiring fast and efficient switching. Its robust design, high switching speed and low losses provide the user with a reliable and efficient switching system.

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