NGB8206N Discrete Semiconductor Products

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NGB8206N is a 600V N-channel IGBT module series with improved efficiency and low conduction loss that can be used in a wide variety of applications. This series is designed for applications that require low on-state voltage (VCE) and low gate-to-emitter voltage (VGE) operation. It is also capable of handling large current, making it versatile and well-suited for applications such as servo motors, railway systems, air-conditioners and industrial equipment.

The NGB8206N series provides excellent performance due to its dual-die construction, which allows for greater efficiency, fast switching speed and a long operating life. It also features a rated collector current of 8A, which provides the necessary high-level current for a wide range of applications. In addition, its rated collector-emitter voltage (VCE) can reach 600V, making it suitable for high-power applications. This series also includes an anti-parallel diode, which significantly reduces the power loss due to reverse recovery current.

The working principle of an NGB8206N IGBT is based on its structure, which is composed of three layers: two N-type layers and one P-type layer. The two N-type layers are placed between the emitter and collector, while the P-type layer is placed between the base and collector. When a voltage is applied to the base of the IGBT, the electrons in the N-type layers are attracted to the P-type layer and flow through the device from the emitter to the collector. In this process, the current can flow from the collector to the emitter (on-state) or from the emitter to the collector (off-state). The flow of current can be controlled by the base voltage, which determines the on and off states of the IGBT.

NGB8206N series IGBTs are suitable for use in a wide variety of applications. For example, they are often used in power devices such as invertors, converters, motor drives, and traction systems. They can also be used in high-frequency and high-power switching applications, such as those found in telecom and system control. The IGBTs are also used in devices that require precision control, such as in lighting power supplies, home appliances and HVAC systems.

NGB8206N IGBTs provide excellent performance and reliability due to their dual-die construction and low conduction loss. Their low on-state voltage and low gate-to-emitter voltage operation allows them to be used in a wide range of applications, from high-power switching to precision control. The anti-parallel diode also significantly reduces power losses caused by reverse recovery current.

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