NGB8202NT4 Discrete Semiconductor Products

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The NGB8202NT4 is a high power, triac-based, insulated-gate bipolar transistor (IGBT). It is specifically designed for high-power switching applications where high-current and low-voltage operation is required. This transistor is manufactured using advanced CMOS technology and employs a PNP bipolar junction transistor (BJT) as its main element. In this design, the collector-emitter (EC) path is created by an insulated-gate mechanism, allowing for fast switching time, low power dissipation and high current carrying capacity.

The transistor\'s collector-emitter voltage rating is 1200V and collector dissipation is rated at 150W. The high-current, low-voltage operation of the NGB8202NT4 is achieved by employing a switching element which connects and disconnects the base of the transistor from the supply voltage. This device is also optimized for high-speed switching performance, providing a typical switching time of 300ns.

The NGB8202NT4 is designed to operate with several types of DC motor control applications. It can be used in both AC and DC motor control applications when controlling the speed, current, and overall performance of the motor. Additionally, this device can be incorporated into an array of different switching power supplies, where it can be used to switch various load currents. Furthermore, it can control and regulate the voltage in circuits that use triac triggering.

The NGB8202NT4 is designed to operate with a wide range of voltages from 6V to 32V. It requires a minimum peak gate current of 0.7A and a minimum gate voltage of 4V. Its on-state losses are minimized due to its low saturation voltage. As such, it can be used to increase efficiency in circuits where power and efficiency are of great concern.

The working principle of the NGB8202NT4 is based on the cross-conduction of two bipolar transistors connected in series with an insulated-gate. This structure provides a way for the collector-emitter current (Ic) to be commutated by injecting a relatively small amount of current into the gate. This is done using a gate driver circuit to drive the gate of the transistor to the required gate voltage level. The gate driver circuit will then reduce its output current once the desired voltage has been achieved. As a result, the transistor can be comfortably operated in either direction by regulating the gate voltage.

The NGB8202NT4 is a versatile device which can be used in a variety of motor control and switching power supply applications. It is capable of operating with a wide range of voltages and its high current, low voltage operation makes it suitable for high power switching applications. It can be driven with a low-cost driver circuit and its on-state losses can be minimized to boost system efficiency. In addition, its switching time of 300ns ensures fast action.

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