NGB8206NT4G Discrete Semiconductor Products |
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Allicdata Part #: | NGB8206NT4G-ND |
Manufacturer Part#: |
NGB8206NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | IGBT IGNITION 20A 350V D2PAK |
More Detail: | IGBT 390V 20A 150W Surface Mount D2PAK |
DataSheet: | NGB8206NT4G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 390V |
Current - Collector (Ic) (Max): | 20A |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 4.5V, 20A |
Power - Max: | 150W |
Input Type: | Logic |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | NGB8206 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NGB8206NT4G is a single IGBT that is used for a wide variety of applications. It is a type of transistor that is designed to control the flow of current. This device is made up of a combination of two transistors and has the ability to control a large load. This type of IGBT is a great choice for applications that require high switching power and speed.
The NGB8206NT4G is typically used in applications such as motor drives, UPS power supplies, and power inverters. This IGBT device features an insulated gate and an extremely-low on-state voltage drop. The insulated gate prevents the gate-controlled current from reaching the collector junction and providing a mechanism for improved switching performance and lower conduction losses.
The NGB8206NT4G is generally used in applications requiring high efficiency due to its high speed and low-power consumption. This device is often used in high-power applications, including medical equipment, solar panels, and wind turbines. Additionally, this type of IGBT is especially well-suited for high-current applications, allowing the device to provide superior performance under heavy load conditions.
The working principle of the NGB8206NT4G is based on the principle of a non-linear current transfer. A small pulse of current is sent to the gate of the IGBT, and the current will then travel through the base region of the transistor, creating a larger voltage waveform. This waveform will then trigger the collector of the transistor, causing the current to flow from the collector to the emitter. This process turns the device on, allowing a larger current to flow.
The NGB8206NT4G is a versatile device that can be used in a variety of applications. The device has an extremely-low on-state voltage drop, allowing designers to take advantage of its high efficiency and low-power consumption for a variety of applications. Additionally, the device is able to handle high currents, making it a great choice for high-powered applications. With its wide variety of uses, the NGB8206NT4G is an ideal choice for a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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NGB8206NT4G | Littelfuse I... | 0.0 $ | 1000 | IGBT IGNITION 20A 350V D2... |
NGB8206NTF4 | ON Semicondu... | 0.0 $ | 1000 | IGBT 390V 20A 150W D2PAK3... |
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