NID9N05ACLT4G Discrete Semiconductor Products |
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Allicdata Part #: | NID9N05ACLT4GOSTR-ND |
Manufacturer Part#: |
NID9N05ACLT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 52V 9A LL DPAK-3 |
More Detail: | N-Channel 52V 9A (Ta) 1.74W (Ta) Surface Mount DPA... |
DataSheet: | NID9N05ACLT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.74W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 40V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 9A, 12V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 12V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 52V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NID9N05ACLT4G transistor is a single-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a kind of electron-controlled device, which is made up of semiconductor material and has two terminals which are connected to the semiconductor material. The most important feature of this transistor is its ability to control the flow of current, which is controlled by the voltage applied to the gate terminal.
The NID9N05ACLT4G MOSFETs are widely used in different applications, such as power electronics, motor control, switching supplies, and RF amplifiers. It is often used in DC/DC converters, motor control devices, and high-speed switching applications. It is also used in RF amplifiers and switching circuits. Moreover, it can be used in low-noise amplifiers. Another application of this transistor is its usage in power supplies, which are frequently used for charging smartphones and laptop computers.
The working principle of the NID9N05ACLT4G MOSFET is very simple. It basically works by electrostatic control of current. This means that when a potential difference is applied to the gate terminal, a substantial field is produced and the charge carriers in the semiconductor material are attracted to a higher potential (drain) end while repelling from the source end. The resulting current follows the path of least resistance in the circuit, thus allowing current to flow through it.
The NID9N05ACLT4G MOSFETs are popular among engineers due to their high power efficiency and low power dissipation. Furthermore, they operate at high frequencies and are capable of performing fast switching operations. They also come in various packages that are suitable for various designs and applications. Additionally, they are also cheap to manufacture as compared to other transistors. Therefore, they are often used in various applications.
In conclusion, the NID9N05ACLT4G transistor is a single-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is widely used for many different applications, such as power electronics, motor control, switching supplies, and RF amplifiers. It works on the principle of electrostatic control of current and is highly efficient and low power dissipation. Moreover, it is also cheap to manufacture and comes in a variety of packages, making it suitable for many different designs and applications. This makes it an ideal solution for many different applications.
The specific data is subject to PDF, and the above content is for reference
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