NIF9N05CLT1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	52V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 10V
Rds On (Max) @ Id, Vgs:	125 mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 4.5V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 35V
FET Feature:	--
Power Dissipation (Max):	1.69W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

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The NIF9N05CLT1 is a part of a subfamily of field-effect transistors (FETs) known as metal–oxide–semiconductor FETs (MOSFETs). It is a single device, meaning it consists of one channel rather than the two channels found in dual FETs. This type of FET has a wide range of applications, from simple switching to more complicated digital circuits. It is also a popular choice for analog circuit designs, including power amplifiers and audio circuits.One of the main benefits of MOSFET transistors is their inherently low power drain and low noise levels. This makes them suitable for applications that require low-power operation, such as battery-powered devices, or where low noise is important, such as in audio circuits. The NIF9N05CLT1 in particular is well-known for its low on-resistance - the resistance presented to current flow when the device is ‘on’. This makes it ideal for applications that require precise control of current flow, such as in motor controls.The key feature that sets MOSFETs apart from other types of FETs is their working principle. They are constructed from three main elements: a semi-conductive substrate, a metal–oxide–semiconductor (MOS) gate, and a pair of source and drain contacts. The substrate and gate together form a capacitor, with the substrate as the lower conducting plate and the MOS gate as the upper insulating plate. When a voltage is applied to the gate, it forms an electric field between the gate and the substrate. This electric field induces a current between the source and the drain, creating a conducting path. The voltage needed to control current flow through the device is known as the threshold voltage. In the case of the NIF9N05CLT1, this value is 2.5 volts. This means that applying an input voltage between 0V and 2.5V will not result in any current flow between the source and drain, and any voltage greater than 2.5V will create a conducting channel. As the voltage applied to the gate increases, the electric field increases and the resistance of the device decreases, allowing more current to flow through it. Due to its low on resistance and low voltage operation, the NIF9N05CLT1 is an ideal choice for many applications. It is often used in motor controls, due to its ability to precisely control the current flow; in switching applications, thanks to its low power consumption; and in audio applications, where its low noise output is beneficial. Its uses also extend to low-power logic circuits and analog circuits, such as power amplifiers.In conclusion, the NIF9N05CLT1 is derived from the family of MOSFETs, a type of FET that is characterised by its low on-resistance and low power consumption. It is particularly valued for its precise control of current flow, low noise output, and low voltage operation, and is used in a wide range of applications, ranging from logic circuits and audio circuits to motor controls and analog circuits.<div><b>Transistors - FETs, MOSFETs - Single</b></div>

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