NILMS4501NR2G Allicdata Electronics

NILMS4501NR2G Discrete Semiconductor Products

Allicdata Part #:

NILMS4501NR2GOSTR-ND

Manufacturer Part#:

NILMS4501NR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 24V 9.5A 4-LLP
More Detail: N-Channel 24V 9.5A (Ta) 1.4W (Ta) Surface Mount 4-...
DataSheet: NILMS4501NR2G datasheetNILMS4501NR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 4-DFN
Supplier Device Package: 4-PLLP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Current Sensing
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NILMS4501NR2G is a single-channel MOSFET that is suitable for many applications, including linear, general-purpose, and power. It features a low voltage operation and low input capacitance, making it an ideal choice for a number of different electronic systems. Additionally, it has a high peak current and fast switching speed, which makes it a great option for high-speed applications. In this article, we will explore the workings and applications of the NILMS4501NR2G.

The NILMS4501NR2G is constructed with a metal-oxide semiconductor field-effect transistor (MOSFET). It is a type of nonvolatile device that is commonly used in many electronic circuits. It is a three-terminal device with a source, a gate, and a drain. A voltage applied to the gate determines the size and magnitude of the electrical current passing through the source-drain channel. This type of transistor is often used in a variety of power management, switching, and low-voltage circuits.

The maximum voltage rating of the NILMS4501NR2G is 12V and the maximum current rating is 45A. It features a breakdown voltage of 6V, which helps to increase its efficiency and reduce power losses. Additionally, its low voltage operation makes it suitable for use with sensitive microcontrollers and other sensitive electronic components. Furthermore, its low input capacitance provides fast switching speed and high peak current handling capacity. This makes it an ideal choice for applications where fast switching speeds are necessary.

In terms of its application field, the NILMS4501NR2G can be used in a variety of applications. It is often used as a linear or general-purpose switch, as well as in power circuits. It can also be used in low power circuits, such as logic circuits, cell phone equipment, and low noise amplifiers. Additionally, its fast switching speed makes it an excellent choice for high-speed applications such as smart switching and pulse width modulation.

The key advantage of the NILMS4501NR2G is its high peak current and fast switching speed. This makes it well-suited for use in a variety of applications, including power conversion, smart switching, and pulse width modulation. Additionally, its low voltage operation and low input capacitance give it a great number of advantages. This makes it a great choice for use in sensitive circuits, such as logic circuits and microcontrollers.

In summary, the NILMS4501NR2G is a single-channel MOSFET that is suitable for many applications, including linear, general-purpose, and power. It features a low voltage operation and low input capacitance, making it an ideal choice for a number of different electronic systems. Additionally, its high peak current and fast switching speed make it an excellent choice for high-speed applications. It is often used as a linear or general-purpose switch, as well as in power circuits, low power circuits, and logic circuits. This makes it a great option for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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