NM93C06M8 Allicdata Electronics
Allicdata Part #:

NM93C06M8-ND

Manufacturer Part#:

NM93C06M8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EEPROM 256 SPI 1MHZ 8SOIC
More Detail: EEPROM Memory IC 256b (16 x 16) SPI 1MHz 8-SOIC
DataSheet: NM93C06M8 datasheetNM93C06M8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256b (16 x 16)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: NM93C06
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NM93C06M8 belongs to a type of memory, which is widely used in various applications due to its small size, low power consumption and good electric control characteristics. The chip is a 9-bit electrically erasable PROM (EEPROM). The NM93C06M8 is an 8-pin programmable memory device that store 9-bit data. It has a fast erase/write time and requires only one supply voltage, ranging from 2.7V to 5.48V. The device is capable of storing up to 256 bits of data, and can be easily programmed using low-voltage programming algorithms.

This NM93C06M8 memory device is most often used in consumer applications, such as toys, consumer electronics, and audio/video products, as well as automotive, medical, communication and industrial control applications. It is also used for data logging, remote control system, intelligent switch configuration and code tracing. The product is suitable for use in electronics that require data storage, configuration and checking, as well as data transmission and storage in non-volatile memory.

The working principle of the NM93C06M8 memory device is the same as other memories. The data is stored in an array of memory cells. Each cell is composed of a transistor and a capacitor, and the voltages in them represent binary data. To read or write data, the control circuit applies a certain voltage on the memory cells. When writing, the voltage difference is greater than the threshold voltage level which allows current to pass through the cell, storing the data. When reading, the voltage is measured before and after application of the control voltage, and the data is determined from the difference in voltage.

The NM93C06M8 also features advanced features like wear-leveling, write-protection, and data-retention. Wear-leveling helps maintain a uniform level of wear on each memory cell, thus increasing the product’s lifespan. The write-protection feature prevents accidental erasure or overwriting of stored data. Finally, data retention refers to the ability of the memory device to retain the data stored in it even when power is removed. This is an important feature as it prevents data loss due to power failure or accidental shut-off.

In conclusion, the NM93C06M8 is a reliable memory device suitable for numerous memory applications. It combines a low-power consumption, fast erase/write time, and wear-leveling, write-protection and data retention features. It can store up to 256 bits of data and is ideal for a wide range of consumer, automotive, medical, communication and industrial control applications. The simple working principle explained above provides a basic understanding of how this memory device works.

The specific data is subject to PDF, and the above content is for reference

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