NM93C46LN

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NM93C46LN is a small capacity EEPROM chip, which consists of non-volatile memory cells and associated control logic. Being 1K bit with a 16-bit address and 32-byte organization, it provides 1,024 bits of permanent data storage. This chip has a wide range of applications and is suitable for general purpose non-volatile data storage. In addition, it can be used in a wide variety of applications and for various applications, such as consumer electronics, automotive, industrial control and medical electronics.

NM93C46LN is featured by low energy dissipation, low supply voltage, low operating temperature, high durability and reliability. It provides a high speed access time of 25ns, which enables fast data write, erase, and read operations. In addition, the chip supports data security function with low voltage and high speed operation. For example, the chip provides data access protection, write protect, and block protect functions.

Working Principle

NM93C46LN uses an array of floating gate transistors as memory cells, which can store and transfer information. This chip has a write enable (WE) input, an output enable (OE) input, an internal write enable (WREN), and a three-state data output (DOUT) pin. The WE input is connected to the write enable (WREN) and write protect (WP) inputs, and the OE input is connected to the reset (RST) input. To operate, the WE and OE inputs are first activated, followed by the WREN and WP inputs, which enables the write and erase operations. The data are then loaded from an input data pin or from a data buffer inside the chip. The data is transferred from the data input to the source (S) terminal of the memory cell arrays.

The operation of NM93C46LN is similar to that of a random access memory (RAM). The chip provides read and write access to the data stored in the memory cells. The read operation begins with the OE being activated. The data is then read from the addressed memory cell and transferred to the DOUT pin. The data is then held until the OE is deactivated. The write operation is triggered by activating both the WE and WREN inputs. The data is then transferred from the S terminal to the selected words of the memory cell array. After the write cycle is completed, the WREN is then deactivated.

One of the advantages of NM93C46LN is that it uses very low power consumption during write and erase operations. This helps reduce the power consumption of the chip. In addition, the chip provides high speed write and read operations, which helps improve the performance of the system. The chip also can store data for up to 10 years and it has a write/erase cycle of up to 100,000 times.

Application Field

NM93C46LN has a wide range of applications. It is widely used in consumer electronics, automotive, industrial control and medical electronics. It can be used as a data storage device in television receivers, electronic watches, VCRs and camcorders. In automotive applications, it can be used in engine control, anti-theft systems, braking systems and other safety systems. In industrial control applications, it can be used in process controls, metering and measurement systems. In medical electronics, it can be used in medical electrocardiographs, medical imaging systems and medication management systems.

In addition, NM93C46LN can be used as an interfacing device between a microcontroller and a memory device. It can also be used in a wide range of applications for storing and/or updating various application data. It is also used as a non-volatile storage device for system parameter settings, password protection and other secure data. It is also used in security systems for keeping a record of people entering or leaving.

Conclusion

NM93C46LN is a low-cost, low-power, non-volatile memory chip. It has a wide range of applications and it is suitable for consumer electronics, automotive, industrial control and medical electronics. It has a write enable input, an output enable input, an internal write enable, and a three-state data output pin. In addition, it provides a high speed access time of 25ns and it has a write/erase cycle of up to 100,000 times.

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