NM93C56LZM8

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	2Kb (128 x 16)
Clock Frequency:	250kHz
Write Cycle Time - Word, Page:	15ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Base Part Number:	NM93C56

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NM93C56LZM8 Memory Application Field and Working Principle

NM93C56LZM8 is a 64KB Nonvolatile Ferroelectric Random Access Memory (F-RAM) product family from RAMTRON International Corporation. This device is designed to enable highly reliable, fast-access, nonvolatile data storage. With a read access time of up to 10ns, NM93C56LZM is an ideal replacement for nonvolatile SRAMs, EEROMs, EEPROMs and Flash memories. It is also an ideal replacement for volatile SRAMs when high levels of system robustness are required.

Application Field

NM93C56LZM8 are used in most industrial and automotive applications. The most common applications are:

• Industrial and Embedded Control Systems.
• Automotive Control and Telematics Applications.
• Medical Devices.
• Robotics/ Machine Control.

Features

• Industry-Standard Serial Peripheral Interface (SPI).
• Low-Voltage (1.8V/2.5V/3.3V) Operation.
• Unlimited Write Endurance.
• One Million Read/Write Cycles.
• Low Power Consumption.
• Endurance of up to 10 Years (at +25°C).

Working Principle

  NM93C56LZM8 is a 64KB nonvolatile ferroelectric random access memory device that is similar to SRAM, but offers enhanced reliability and longer data retention time. This device works on the principle of ferroelectricity, which is the property of certain materials to store electric charges. This property is used to store data in the NM93C56LZM8 nonvolatile memory cells.  In normal operation, the NM93C56LZM8 stores or retrieves data. To do this, the read/write control signals must be applied. When data is written to the NM93C56LZM8, it is written to the cell. When the device is powered off, the cell retains the written data. When data is read, the cell transmits the data back to the device.  The NM93C56LZM8 is usually connected to an external microcontroller or DSP. The external device controls the read/write operation of the memory device. The external microcontroller can also perform address decoding and some other operations to ensure the correct operation of the memory device.

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