NMSD200B01-7 Discrete Semiconductor Products |
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Allicdata Part #: | 1034-NMSD200B01DITR-ND |
Manufacturer Part#: |
NMSD200B01-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.2A SOT363 |
More Detail: | N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | NMSD200B01-7 Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 200mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
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The NMSD200B01-7 is a field effect transistor (FET) that is typically used in power amplifier circuits. It is a single device (also known as a single MOSFET) with a drain-to-source breakdown voltage of 200V and a powerful current handling capability of 10A. It can be used in a wide range of applications, such as power converters, power supplies, motor control, and audio power amplification.
The NMSD200B01-7 uses a metal-oxide semiconductor field effect transistor (MOSFET) for transistor functionality. MOSFETs use gate electrodes to control the switching of the current path between the source and drain. The gate is insulated from the rest of the transistor, allowing the gate voltage to control current flow from the source to the drain. The NMSD200B01-7 also has built-in protection against over-voltage and over-current.
The NMSD200B01-7 is especially useful in high-frequency power applications where low on-resistance, fast switching, and low gate charge are necessary. It has a low input capacitance and a fast rise time for high-frequency switching, making it well suited for a variety of applications. These include DC-DC converters, industrial motor controllers, audio amplifiers, and switch mode power supplies (SMPS).
The NMSD200B01-7 has a built-in protection feature called the Drain-Source voltage breakdown voltage. This threshold voltage ensures that the device will not be damaged by over-voltage or over-current conditions. In addition, the device has an impedance matching feature which helps to reduce power dissipation in the circuit by minimizing power losses.
The NMSD200B01-7 is also designed with a low on-resistance, which provides improved power efficiency and protects the device from over-current conditions. It has a low gate capacitance and a fast switching time, allowing it to quickly respond to changes in the circuit. This fast switching time also helps to reduce power loss, as the device can switch off at higher frequencies than other FETs.
The NMSD200B01-7 is a high-performance single MOSFET that is well suited for a variety of applications. It has a high starting current, a low input capacitance and a fast rise time for high-frequency switching, making it ideal for use in power converters, power supplies, motor control, and audio power amplifiers. In addition, its built-in over-voltage and over-current protection and low on-resistance make it a safe and reliable choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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