Allicdata Part #: | NP15P06SLG-E1-AY-ND |
Manufacturer Part#: |
NP15P06SLG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 60V 15A TO-252 |
More Detail: | P-Channel 60V 15A (Ta) 1.2W (Ta), 30W (Tc) Surface... |
DataSheet: | NP15P06SLG-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 (MP-3ZK) |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NP15P06SLG-E1-AY is a logic level N-channel enhancement mode MOSFET used in the design of power electronic circuits. The device has a breakdown voltage (BVdss) rating of 15V. It is capable of switching in high-side and low-side applications in a wide range of gate drive environments. This MOSFET is mainly used in applications such as server/communication/industrial automation, audio/video equipment, whitegoods, home automation, lighting and other industrial and home usage.
A MOSFET is a type of transistor that uses a metal oxide semiconductor to control the amount of current that passes through a circuit. As compared to a conventional transistor, a MOSFET is superior in terms of on-resistance and power dissipation. This makes it ideal for applications where a high current must be switched in a very small time frame.
The NP15P06SLG-E1-AY is a single enhancement-mode power MOSFET. The device works on the principle of a channel between the drain and source, which is induced by a voltage when the gate is energized. The channel material that is used in this FET is an oxide, which allows electrons to pass through with very low resistance. When the gate is energized, the channel “opens” and the current can pass through more easily. When the gate is de-energized, the channel “closes” and the current flow is reduced. This process can be used to regulate the current flow in a circuit, thus controlling the power consumption of the device.
The NP15P06SLG-E1-AY has a maximum drain-source voltage (Vds) of 15V, and a maximum drain current (Id) rating of 71A. The device can be used in a wide range of gate drive environments and can switch in both high-side and low-side applications. The device also has a lower on-state resistance (Rdson) as compared to other devices available in the market, making it ideal for applications where a high current is required. The device also has a fast switching speed and ESD protection for better reliability.
The NP15P06SLG-E1-AY is an ideal choice for design engineers and is widely used in applications such as server/communication/industrial automation, audio/video equipment, whitegoods, home automation, lighting and other industrial and home usage. The device is also widely used in power converters and motor control, solar power applications and other power electronics related applications.
In summary, the NP15P06SLG-E1-AY is a logic level N-Channel enhancement mode MOSFET used in the design of power electronic circuits. The device has a breakdown voltage rating of 15V and is capable of switching in high-side and low-side applications in a wide range of gate drive environments. The device offers a low on-state resistance and fast switching speed, making it an ideal choice for applications such as server/communication/industrial automation, audio/video equipment, whitegoods, home automation, lighting and other industrial and home usage.
The specific data is subject to PDF, and the above content is for reference
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