NP180N055TUJ-E1-AY

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NP180N055TUJ-E1-AY is a single field-effect transistor (FET) designed with a metal/oxide/semiconductor (MOS) manufacturing process technology. It belongs to the MOSFET family, which are also known as voltage-controlled FETs because the current is controlled by a voltage source. The NP180N055TUJ-E1-AY has a voltage rating of 175V and a drain-source current (Ids) rating of 0.55A, making it suitable for use in high power applications. The device features a maximum gate threshold voltage of 2V and a low On-resistance of only 0.2 ohms, making it an ideal choice for power conversion or line-regulating applications.The working principle of the NP180N055TUJ-E1-AY is based on the MOS technology. This type of transistor operates by the “field effect”, meaning that the gate voltage is the primary factor controlling current flow. The field effect transistor works by using the electrical field created by a voltage applied to its gate. When the gate voltage is increased, the current between the gate and the drain is increased, which also increases the current between the source and the drain. Conversely, when the gate voltage is decreased, the current between the gate and the drain is decreased, which decreases the current between the source and the drain.As a result, the MOSFET acts like a switch, allowing current to flow through its channel when the gate voltage is high and blocking current flow through its channel when the gate voltage is low. The NP180N055TUJ-E1-AY is particularly well suited to high power applications because it has a low drain-source on-resistance. This low resistance results in minimal power loss during current flow, making the device an ideal choice for power conversion or line-regulating applications.In addition, the NP180N055TUJ-E1-AY is designed to protect systems from fault currents by providing continuity when over-voltages or over-temperatures are detected. This is achieved by increasing the gate threshold voltage (Vth), which decreases the current to a safe level. It is designed to operate in high temperature environments up to 175°C, making it suitable for use in high temperature applications such as automotive and industrial applications.Overall, the NP180N055TUJ-E1-AY is a single MOSFET with an exceptionally low drain-source on-resistance and a wide voltage rating, making it suitable for use in high power applications. Its built-in protection mechanisms allow it to function in a stable and dependable manner in high temperature environments, making it an ideal choice for both power conversion and line-regulating applications.

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