Allicdata Part #: | NP20P04SLG-E1-AY-ND |
Manufacturer Part#: |
NP20P04SLG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 40V 20A TO-252 |
More Detail: | P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface... |
DataSheet: | NP20P04SLG-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 (MP-3ZK) |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NP20P04SLG-E1-AY transistors are a highly efficient and robust family of Field-Effect Transistors (FETs). These transistors are designed as a single device with standard pin-out and package, making them suitable for a wide range of applications. In this guide, we will discuss the application field and working principle of NP20P04SLG-E1-AY transistors.
NP20P04SLG-E1-AY Application Field
NP20P04SLG-E1-AY transistors are ideally suited for a wide range of applications including power management, motor control and signal amplification. They can be used for switching supplies, power on/off control and signal conditioning. Additionally, these transistors can be used for amplifying audio signals, as well as providing power to motors.
Owing to their robust construction and excellent efficiency, these transistors can be used in demanding environments including large industrial settings, HVAC systems and medical equipment. In addition, these transistors are incredibly efficient, making them perfect for use in battery powered products.
NP20P04SLG-E1-AY Working Principle
NP20P04SLG-E1-AY transistors are based on the Field-Effect Transistor (FET) type of circuitry. This type of transistor has a gate terminal which, when provided with a voltage, alters the electric field in the channel between the source and drain providing conduction. The gate terminal sensitivity allows for extremely low harmonic distortion, improved switching speed and excellent regulation.
NP20P04SLG-E1-AY transistors are also designed with a low dynamic drain-source on-resistance (RDS(on)) of 4 milliohms. This low RDS(on) allows for extremely efficient power dissipation and low levels of thermal runaway. In addition, these transistors also offer excellent immunity to electromagnetic interference (EMI).
The NP20P04SLG-E1-AY transistors are also designed with robust metal-oxide semiconductor (MOS) technology which ensures maximum efficiency by providing a tight channel for current conduction. This technology also allows for low voltage protection, EMI shielding and excellent heat dissipation.
Conclusion
NP20P04SLG-E1-AY transistors are a reliable and efficient family of Field-Effect Transistors (FETs). These transistors are designed as a single device with standard pin-out and package, making them suitable for a wide range of applications including power management, motor control, signal amplification, audio and video processing and more. In addition, these transistors feature a low dynamic drain-source on-resistance (RDS(on)), low harmonic distortion, excellent heat dissipation, robust construction and excellent immunity to electromagnetic interference (EMI).
The specific data is subject to PDF, and the above content is for reference
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