NP22N055SLE-E1-AY Allicdata Electronics
Allicdata Part #:

NP22N055SLE-E1-AY-ND

Manufacturer Part#:

NP22N055SLE-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 55V 22A TO-252
More Detail: N-Channel 55V 22A (Ta) 1.2W (Ta), 45W (Tc) Surface...
DataSheet: NP22N055SLE-E1-AY datasheetNP22N055SLE-E1-AY Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (MP-3ZK)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 37 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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NP22N055SLE-E1-AY is a type of Power MOSFET transistor that has some excellent characteristics, making it popular for industrial and medical applications. It has an extremely low on-resistance, making it a premier choice for switching and DC/DC converter applications. It also has a wide voltage and current range, making it suitable for a variety of power management solutions.

NP22N055SLE-E1-AY is composed of a MOSFET (Metal Oxide Field Effect Transistor) that is built using an N-type (negative) and a P-type (positive) material. The N-type and P-type materials are both connected to a gate (G). When an input voltage is applied across the gate (G) and the source (S), the transistor either increases or decreases the current at the drain (D).

The NP22N055SLE-E1-AY has a special feature that helps in reducing the power losses in switching applications. It has an internal drain-gate diode that eliminates the need for an external free-wheel diode. This feature helps reduce the power loss when switching high voltage loads.

The NP22N055SLE-E1-AY also features a low RDS(on) which makes it suitable for switching a wide range of voltages and currents. Additionally, the transistor has a maximum voltage rating of 70V and a current rating of 22A. In terms of switching times, it has a rise time of 4ns and a fall time of 8ns.

In terms of application, the NP22N055SLE-E1-AY is commonly used in a variety of products such as DC/DC converters, automotive power supplies, medical power supplies, Uninterruptible Power Supplies (UPS), and computer power supplies. Because of its fast switching times and low to moderate on-resistance, the NP22N055SLE-E1-AY is also used in high-frequency switching applications.

In conclusion, the NP22N055SLE-E1-AY is an advanced power MOSFET transistor. It has a low on-resistance and a wide voltage and current rating that make it suitable for a variety of power management solutions. The device also features an internal drain-gate diode that helps reduce the power losses when switching high voltage loads. The NP22N055SLE-E1-AY can be used in applications ranging from DC/DC converters and automotive power supplies, to medical power supplies, UPS, and computer power supplies.

The specific data is subject to PDF, and the above content is for reference

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