Allicdata Part #: | NP23N06YDG-E1-AYTR-ND |
Manufacturer Part#: |
NP23N06YDG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 60V 23A 8HSON |
More Detail: | N-Channel 60V 23A (Tc) 1W (Ta), 60W (Tc) Surface M... |
DataSheet: | NP23N06YDG-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | 8-HSON |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NP23N06YDG-E1-AY transistor is a single N-channel MOSFET device. In terms of functionality and working principle, the device is designed to act as a switch, position-controlled current translator, or amplifier when required. This particular MOSFET is best suited for low power applications, such as those found in gate drivers, clocks, and voltage converters.
Application Field
Due to the low powering capabilities of the device, it is used in many low voltage and low load applications. This makes it ideal for use in motor control circuits, LED lighting, solar energy systems, modern audio amplifiers, and other products involving low voltage and current operations. It is also extremely reliable when used for for basic functions such as voltage leveling or on-off switching.
Working Principle
The NP23N06YDG-E1-AY is a MOSFET device, meaning it employs the Metal-Oxide-Semiconductor Field-Effect transistor principle. This principle works on the basis of allowing the flow of current though the device when the gate-source voltage is raised. As the voltage goes up, an electric field is formed and in turn charges up the gate and in turn forms an inversion layer on the substrate. This inversion layer will then act as a conductor, allowing current to flow through the device. This process was the foundation of MOSFETs, and is still applicable in the modern day devices, such as the NP23N06YDG-E1-AY.
The NP23N06YDG-E1-AY also utilises a MOSFET source-drain configuration, which keeps the two terminals connected, allowing for relatively high switching speeds and low loss of power when performing operations. The device does, however, require a steady gate voltage supply in order to trigger the switching process.
Apart from its aforementioned uses, the NP23N06YDG-E1-AY can be integrated in various devices as a high-side switch. Given its low power rating, it is perfect for switching low loads, and its low offset voltage makes it a good device for achieving voltage level shifting.
Conclusion
The NP23N06YDG-E1-AY is a single N-channel MOSFET designed for low power applications. Its uses are varied, ranging from basic on-off switching, through to voltage level shifting and motor control. The device utilises the n-channel MOSFET principles in order to effectively switch between gate and source voltage levels. It is a highly reliable device and is used in many modern products.
The specific data is subject to PDF, and the above content is for reference
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