| Allicdata Part #: | NP33N06YDG-E1-AYTR-ND |
| Manufacturer Part#: |
NP33N06YDG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 60V 33A 8HSON |
| More Detail: | N-Channel 60V 33A (Tc) 1W (Ta), 97W (Tc) Surface M... |
| DataSheet: |  NP33N06YDG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-SMD, Flat Lead Exposed Pad |
| Supplier Device Package: | 8-HSON |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1W (Ta), 97W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 16.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NP33N06YDG-E1-AY is a high-speed, high-current, low-voltage, high-side switch designed to switch a load between a low voltage, low side power supply and ground. It has a high-performance N-channel MOSFET which is an ideal choice for applications such as load switching, motor control and DC-DC conversion. The device features low on-resistance and fast switching speeds. The NP33N06YDG-E1-AY is RoHS compliant and has strict environmental and quality standards.
The NP33N06YDG-E1-AY is a single N-channel enhancement-mode field-effect transistor. It is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that utilizes electrical field to control the conductive flow of electrons. N-channel MOSFETs, like those found in the NP33N06YDG-E1-AY, are used for higher-current applications than their opposite P-channel counterparts. This device is able to handle currents up to 12A and provide a high level of isolation between the input (such as a digital signal or PWM) and output load. The device features a low maximum on resistance of 2.6 Ohms and a maximum front-to-back RDSon of 8.5 mOhms.
The NP33N06YDG-E1-AY works by allowing the input signal to pass through a channel that contains an insulated gate. When the channel is “ON” the gate is able to attract free electrons and when the channel is “OFF” the gate repels them back. This enables the device to switch a load between a low side power supply and ground. The NP33N06YDG-E1-AY is well suited for switching applications, as it can be turned on and off relatively quickly. This is important for motor control in applications such as robotics. The on-resistance and front-to-back RDSon of the device allows it to provide a reliable level of isolation between the application and the load.
The NP33N06YDG-E1-AY is designed to be integrated into a wide variety of applications in order to provide a high level of reliability and performance. Its low on-resistance and fast switching speed make it a good choice for applications such as motor control and load switching. It is also RoHS compliant and has strict environmental and quality standards, making it a highly reliable choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NP33N06YDG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 60V 33A 8HSON... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...